
2N3905BU Discrete Semiconductor Products |
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Allicdata Part #: | 2N3905-ND |
Manufacturer Part#: |
2N3905BU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 625mW Thro... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3905 |
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Transistors - Bipolar (BJT) - Single
Bipolar Junction transistor, commonly known as BJT, is a semiconductor device used for helping the flow of current from one point of the circuit to another.
Among the various types of BJT transistors, the 2N3905BU is a commonly used one for many applications. It features high gain, low power usage, easy to get and wide availability.
Application Field of 2N3905BU
The 2N3905BU is designed to be used in wide range of applications from simple switching circuits to signal amplification. It is suitable for high speed switching and can be used in amplifier or oscillator circuits. Common application fields include:
- Amplifiers
- Switches
- Voltage references
- High voltage saturation switch
- Transistors test equipment
- Power supply circuits
- Biasing circuits
- High voltage DC-DC converter circuits
- Gate drive circuit of MOSFET
- Clippers and clampers
- Transistor arrays
- Pulse generation circuits
Working Principle of 2N3905BU
The 2N3905BU is a NPN type BJT, which means it is a three terminal semiconductor device made up of two PN junction of same type of semiconductor. It is built using a layer of N type semiconductor between two layers of P type semiconductor.
The working principle of NPN type BJT depends mainly on the biasing of Collector and Base terminals. There are two types of biasing schemes: Voltage divider biasing and fixed bias.
- Voltage Divider Biasing
In Voltage divider biasing the bias voltage is established by adding two resistors in series connected to a voltage source. The output of the Voltage divider is connected to the base terminal of transistor. This biasing method is used in applications of low voltage and high current. - Fixed Bias
In this biasing method the collector terminal of transistor is connected with the Output voltage source provided. While the base terminal is connected to a voltage source via a large value resistor, which is called base current biasing resistor. This resistor controls the bias voltage applied to the base terminal. This method is used in applications where high voltage and low current is required.
The working of BJT is further understood with the help of its two modes of operation: Active and Saturation mode.
- Active Mode
In this mode the transistor is said to be in forward biased state. The base-emitter junction is forward biased and collector-base junction is reverse biased. In this mode, the base current Ib entering the base terminal and collector current Ic leaving the collector terminal, both increases in such a manner that the ratio of = Ib/Ic remains constant. This mode is usually used for linear amplification of signals. - Saturation Mode
In this mode the BJT is in reverse bias state. The base-emitter junction is in reverse biased and collector-base junction is forward biased. In this mode, the collector current increases exponentially while base current also increases but at a lower rate. This mode is used when it is desired to have a fast switching action with maximum ON current. It is widely used in digital circuits.
Conclusion
The 2N3905BU is one of the most common BJT transistors and it is used in many applications. It is relatively easy to work with, has good performance and excellent breakdown voltage ratings. It is widely used in amplifier, switching and oscillator circuits due its wide range of application field, high gain and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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