
Allicdata Part #: | 2N4857JTXL02-ND |
Manufacturer Part#: |
2N4857JTXL02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 40V 360MA TO-18 |
More Detail: | JFET Through Hole TO-206AA (TO-18) |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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The 2N4857JTXL02 is an N-channel junction Field-Effect Transistor (JFET), which looks like a small black package with three pins. It is classified into the Transistors - JFETs category.
The JFET was invented in the 1940s and has been one of the most important semiconductor switching devices over the past six decades. It is a type of field-effect transistor (FET) that works by controlling the electric field in an active semiconductor material. It is known for its voltage-dependent behavior, which makes it particularly suitable for amplifying electronic signals.
The 2N4857JTXL02 is a low noise, low source-drain conduction, and low off-state leakage current JFET, with features such as low input capacitance, high FET gain, and fast switching speed. It is ideal for many types of applications, including remote control receiver circuits, high-performance signal processing, and audio amplifier circuits.
In terms of its working principle, the 2N4857JTXL02 JFET contains a source and drain junction that forms the basis of its active electrical characteristics. The gate is electrically insulated by the oxide layer between the source and drain. Depending on the voltage applied to the gate, a charge will be induced in the oxide layer and this in turn will induce a voltage at the source and drain junctions. This causes changes in the current between the source and drain and so controls the operation of the device.
In terms of its application field, the 2N4857JTXL02 JFET can be used as an amplifier as it has excellent linearity characteristics. It has a high transconductance, making it ideal for a wide range of amplifying applications including audio amplification, linear amplifiers, and low noise amplifiers. The JFET can also be used in noise suppression because of its low noise characteristics. Additionally, its low source-drain conduction and low off-state leakage current make it ideal for use in remote control receiver circuits, high-performance signal processing, and audio amplifier circuits.
In conclusion, the 2N4857JTXL02 JFET is an important semiconductor switching device capable of amplifying electronic signals with excellent linearity characteristics and low noise. It is well suited for a wide range of applications, including audio amplification, linear amplifiers, remote control receiver circuits, high-performance signal processing, and audio amplifier circuits. Additionally, its low source-drain conduction and low off-state leakage current make it particularly suitable for applications which require low noise and low power.
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Part Number | Manufacturer | Price | Quantity | Description |
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2N4860JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4854 | Central Semi... | 0.0 $ | 1000 | TRANSISTOR DUAL TO78Bipol... |
2N4858UB | Microsemi Co... | 55.79 $ | 1000 | JFET N-CHAN 40V 3SMDJFET ... |
2N4859UB | Microsemi Co... | 55.79 $ | 1000 | N CHANNEL JFETJFET |
2N4861JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4858JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 40V 80MA TO-18J... |
2N4859A | Central Semi... | 0.0 $ | 1000 | JFET N-CH 30V 50MA 360MW ... |
2N4856JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 50MA TO-1... |
2N4860JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4860 | Microsemi Co... | 39.43 $ | 1000 | N CHANNEL JFETJFET N-Chan... |
2N4859JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V 360MW TO-18... |
2N4858JVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET P-CHJFET |
2N4860JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4859 | Microsemi Co... | 39.43 $ | 1000 | N CHANNEL JFETJFET N-Chan... |
2N4861JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4899 | Microsemi Co... | 24.45 $ | 1000 | NPN SILICON TRANSISTORBip... |
2N4857JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 40V 360MA TO-18... |
2N4864 | Microsemi Co... | 7.68 $ | 1000 | NPN SILICON TRANSISTORBip... |
2N4856JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 50MA TO-1... |
2N4857 | Microsemi Co... | -- | 1000 | N CHANNEL JFETJFET N-Chan... |
2N4860JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4865 | Microsemi Co... | 7.68 $ | 1000 | NPN SILICON TRANSISTORBip... |
2N4859JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V 360MW TO-18... |
2N4854U | TT Electroni... | 22.89 $ | 50 | TRANS NPN/PNP 40V 0.6A 6C... |
2N4858JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET P-CHJFET |
2N4861JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4859JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V 360MW TO-18... |
2N4861JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V TO-206JFET ... |
2N4858JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 40V 80MA TO-18J... |
2N4860UB | Microsemi Co... | 55.79 $ | 1000 | N CHANNEL JFETJFET |
2N4857UB | Microsemi Co... | 55.79 $ | 1000 | N CHANNEL JFETJFET |
2N4857JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 40V 360MA TO-18... |
2N4895 | Central Semi... | 8.88 $ | 408 | TRANS NPN 60V TO39Bipolar... |
2N4859JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 30V 360MW TO-18... |
2N4857JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 40V 360MA TO-18... |
2N4856UB | Microsemi Co... | 55.79 $ | 1000 | N CHANNEL JFETJFET |
2N4858JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET N-CH 40V 80MA TO-18J... |
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