2N4858 Allicdata Electronics
Allicdata Part #:

2N4858-ND

Manufacturer Part#:

2N4858

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL JFET
More Detail: JFET N-Channel 40V 360mW Through Hole TO-18
DataSheet: 2N4858 datasheet2N4858 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Military, MIL-PRF-19500/385
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Description

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A 2N4858 Junction Field Effect Transistor (JFET) is a type of field effect transistor (FET) which utilizes the manufacturing technology of the simulated semiconductor material to create the modified semiconductor device. A JFET is a kind of unipolar transistor which has no PN junctions in the structure. It is far more simple to construct one than other types of transistors and much easier to understand. A JFET typically has a three terminal configuration, including the source, gate, and drain. The source and the drain are connected to the semiconductor body, while the gate is left free.

JFETs have some similarities in categories between the Bipolar Junction Transistor (BJTs) and their surrounding circuit applications. For example, the current, which flows from source to the drain through the channel, is controlled indirectly by applying an electrical voltage to the gate. This property forms the basis for the analog amplifier and other related applications. What split BJT applications from JFET applications is that JFETs are typically only found in amplifiers or other device structures due to their much lower voltage drop between the source and the drain, resulting in the less current distortion in comparison to the BJTs.

For the unique 2N4858 JFET, it is a P-channel JFET consisting of a p-type silicon substrate and can be used in a wide range of analog electronic applications. Since JFETs have the capability to draw very low drain-source current for high drain-source voltages, the 2N4858 JFET is mostly used as low-noise amplifiers, audio and RF applications, sample and hold circuits, or even as building blocks in communications circuits. Furthermore, the 2N4858 also features low noise characteristics and high input impedance levels which makes it very suitable in many types of audio amplifier circuits.

If we look farther into the details of the working principle of the 2N4858 JFET, we can find that the working principle is not too complicated and it can be explained easily. Basically, a 2N4858 JFET works in two primary steps. First, a gate-source voltage needs to be applied to the device. This will cause the gate’s conductivity to increase and allow electrons to flow from the source region and into the drain region. Secondly, when a drain-source voltage is also applied, the electrons will be pushed from the source to the drain section. This process is known as depletion mode, and it is the fundamental principle of all JFET devices.

To sum up, the 2N4858 JFET plays an important role in many circuits, and it is a type of unipolar transistor with three terminals. Its working principle is explained through two primary steps. Moreover, it has many applications in associated amplifiers and other related circuits for its low voltage drop and low-noise characteristics.

The specific data is subject to PDF, and the above content is for reference

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