2N4859 Allicdata Electronics
Allicdata Part #:

2N4859-ND

Manufacturer Part#:

2N4859

Price: $ 39.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL JFET
More Detail: JFET N-Channel 30V 360mW Through Hole TO-18
DataSheet: 2N4859 datasheet2N4859 Datasheet/PDF
Quantity: 1000
100 +: $ 35.84680
Stock 1000Can Ship Immediately
$ 39.43
Specifications
Series: Military, MIL-PRF-19500/385
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Description

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JFETs (junction field-effect transistors) are almost an essential component in modern electronic circuitry. The 2N4859 application field and working principle are especially important as it is a popular and versatile field-effect transistor. The main function of a JFET is to control the current flow through a circuit. This type of transistor is used in a variety of fields, including signal conditioning, microwave, and telecommunications.

The 2N4859 is a complementary type FET (field-effect transistor). It is a junction Gate N-channel FET that is used in a variety of applications. It has a flat frequency response from 20 mHz to 200 mHz and is popular in radio frequency amplifiers and detectors. It is also used in high-voltage and other applications that require lower noise levels.

The working principle of the 2N4859 involves the modulation of an electrical signal. In order to understand how it works, it is important to first understand the basic principles of a field-effect transistor. Generally, the JFET operates by providing an electrical input between the source and the gate. This voltage separates the electrons that are located in the semiconductor material, across which the source and the gate are situated. When the gate voltage is positive, most of the electrons will be in the source area, making the drain current weak. When the gate voltage is negative, the electrons will be repelled from the drain area, increasing the current.

This modulation of the current is controlled by the variation of the input voltage in the gate. For example, an increase in the gate voltage will cause a decrease in the drain current, while a decrease in the input voltage will increase the drain current. By modulating the voltage, the current can be adjusted accordingly. This is the main purpose of the 2N4859 and how it works.

The 2N4859 is used in a wide range of applications, including signal conditioning, radio frequency applications, and telecommunications. In signal conditioning, the 2N4859 can be used as part of a bridge rectifier, or to control the voltage in a circuit. In radio frequency applications, it can be used as an amplifier or detector. In telecommunications, it can be used as a modulator or demodulator.

The 2N4859 is a versatile component, with a wide range of applications. It is the perfect choice for applications that require a low noise level, high-voltage operation, and a flat frequency response. Its low noise level and high-voltage capabilities make it an essential component in a variety of fields, making it a crucial component for modern electronic circuitry.

The specific data is subject to PDF, and the above content is for reference

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