Allicdata Part #: | 2N4856JTXV02-ND |
Manufacturer Part#: |
2N4856JTXV02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 50MA TO-18 |
More Detail: | JFET Through Hole TO-206AA (TO-18) |
DataSheet: | 2N4856JTXV02 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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A 2N4856JTXV02 is an industrial-grade, surface-mount, N-channel junction field-effect transistor (JFET). The 2N4856JTXV02 is ideal for a wide range of applications that require a high-current switching device which can withstand frequent voltage and current surges, and can operate at high temperatures. This article will explore the application areas and working principle of this device.
Application fields
The 2N4856JTXV02 is frequently used in industrial motor controls, particularly those that require a low power consumption such as servo motors. It is often used in circuits that require high-frequency switching and voltage/current surges such as audio amplifiers, computers, and automation systems. Other applications include dimmers/switches, telecom systems, and HVAC controls.
Due to its high-temperature operation and low power consumption, the 2N4856JTXV02 is also well-suited for automotive applications. It is commonly used in powertrain, emission, and body control systems. This device is especially useful for applications that require a low-impulse detection or high-current switching. It is also often used in driver circuits for high-power IGBTs in motor control systems.
Working Principle
The 2N4856JTXV02 is a surface-mount JFET that operates by using a P-N junction. This device is designed to provide low-noise, high-frequency switching with a low voltage threshold. It has an N-channel junction gate field-effect structure consisting of two N-type regions which are separated by an oxide layer acting as a dielectric. The source and drain regions in the device are separated by a resistive region, while the gate is connected to the surrounding circuit through a pin that is attached to the oxide layer.
The 2N4856JTXV02 operates when a voltage is applied between the source and drain. This voltage will cause a current to flow through the device, which is controlled by the gate voltage. When the gate voltage increases, the amount of current flowing through the device is increased. Similarly, when the gate voltage decreases, the current flowing through the device is decreased. This variation in the current through the device is the working principle of the 2N4856JTXV02.
Conclusion
The 2N4856JTXV02 is a surface-mount N-channel JFET designed for low-current and high-frequency switching applications. Its high-temperature operation and low power consumption make it well-suited for a range of industrial and automotive applications. The device operates by modulating the current flow through it using the gate voltage. This is the basic working principle of the 2N4856JTXV02, and it is the key to understanding how this device functions.
The specific data is subject to PDF, and the above content is for reference
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