2N4857UB Allicdata Electronics
Allicdata Part #:

2N4857UB-ND

Manufacturer Part#:

2N4857UB

Price: $ 55.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL JFET
More Detail: JFET
DataSheet: 2N4857UB datasheet2N4857UB Datasheet/PDF
Quantity: 1000
100 +: $ 50.71320
Stock 1000Can Ship Immediately
$ 55.79
Specifications
Series: *
Packaging: --
Part Status: Active
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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The 2N4857UB is a current-regulating high-power JFET (junction field effect transistor) which has a wide range of applications and working principles. This transistor is capable of providing a good level of performance when used in circuits that require high current amplification, as well as in analog signal processing. In this article, we will discuss the application fields and working principles of the 2N4857UB.

Primary Application Fields

The 2N4857UB is generally used in devices and applications that commonly require high-power current amplification with excellent performance. These can include power amplifiers, power over-voltage switchgear, interface circuits, temperature controllers and voltage regulators. In general, JFETs, and 2N4857UB specifically, tend to be a popular choice for controlling current in applications when a high voltage needs to be regulated.

Due to its impressive performance, the 2N4857UB can also be used in audio circuits as both a pre-amplifier or voltage gain amplifier. This type of FET (field-effect transistor) has the capability of operating at reasonably high speeds, enabling it to be suitable for many different kinds of audio-related circuits.

Working Principle

The 2N4857UB is a unipolar device with a single-gate construction and negative-grid voltage as the majority current carrier. It works by utilizing a resistive channel between the source and drain whose resistance is affected by the voltage applied to the grid. When the grid is properly powered, electrons in the channel increase, making it more resistant. When the grid is not powered, the electrons disperse and the channel resistance decreases.

When the grid voltage is 0V, the channel is “off". This means that the drain current is determined by the source to drain voltage and the pinch-off voltage, which blocks any further current flow. Out of the three possible gate voltages (off, pinch-off and fully on), the pinch-off voltage is the most crucial, as it affects the transistor\'s current gain (µ).

A 2N4857UB has relatively low gate-source capacitance, which makes it more reliable and faster when used in electronic applications. This type of FET is considered “on” when its gate-source voltage is greater than the specified pinch-off voltage. The pinch-off voltage of a 2N4857UB is typically around -5V. When the current between the source and drain increases, the gate-drain capacitance will also increase.

Conclusion

The 2N4857UB is a highly reliable and efficient JFET device suitable for use in a range of applications. It is capable of providing precise control of current with a wide dynamic range and excellent performance. Its relatively low gate-source capacitance also makes it an ideal choice for high-speed applications such as audio-related circuits. With its wide range of capabilities and functions, the 2N4857UB is a widely used FET choice with a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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