2N4858UB Allicdata Electronics
Allicdata Part #:

2N4858UB-ND

Manufacturer Part#:

2N4858UB

Price: $ 55.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: JFET N-CHAN 40V 3SMD
More Detail: JFET N-Channel 40V 360mW Surface Mount 3-UB (3.09...
DataSheet: 2N4858UB datasheet2N4858UB Datasheet/PDF
Quantity: 1000
100 +: $ 50.71320
Stock 1000Can Ship Immediately
$ 55.79
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 60 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Description

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2N4858UB transistors are JFETs and offer very high input impedance with low noise and high current gain for a wide range of applications. They are one of the most popular JFETs used in modern day digital electronics because they are small, robust and low cost options when compared to BJTs or MOSFETs.

The 2N4858UB transistors are usually employed in digital electronics as amplifiers, analog-to-digital converters (ADC) receivers, voltage regulators and frequency control applications. They are ideal for high-speed signals due to their low noise and wide frequency response. Suitable for use with both analog and digital circuits, they help to reduce noise, improve signal-to-noise ratio (SNR) and reduce parasitic capacitances.

Working Principle:

The 2N4858UB transistors are based on a common source field-effect transistor configuration. They utilize a depletion-mode (n-type) JFET that is connected in reverse bias and acts as a component of an impedance converter. This is done by producing a very high input impedance for small voltages and a low output impedance for larger voltages. Thus, it helps to reduce voltage loading, reduce noises and increase the overall SNR.

The basic structure of the 2N4858UB transistor consists of a gate-source connection implemented with a width modulation as the input signal. When a voltage is applied to the gate, the source-drain channel width changes, thereby changing the impedance of the transistor. As the voltage applied to the gate increases, the width of the source–drain channel decreases, and the current increases. Conversely, when the applied voltage is decreased, the source–drain channel width increases, and the current decreases.

The 2N4858UB transistors can be used as amplifiers for audio applications, voltage regulators for linear power supplies, receivers for telecommunication applications, and frequency control elements for FM and PM operation. They also offer a wide range of gain, low noise and high input impedance that makes them suitable for low-noise amplifiers as well.

In addition, the 2N4858UB transistors are suitable for low-noise RF amplifiers due to their high common base current gain (hFE). Also, because of their low gate capacitance and gate-source resistances, they can be used in high-frequency applications.

Conclusion

The 2N4858UB transistors are used in a wide range of applications due to their high common base current gain, low noise and high input impedance. They are a popular option for amplifiers, ADC receivers, voltage regulators and frequency control applications. They are small, robust and low cost compared to many other transistors and can be used in both analog and digital circuits. They help to reduce noise, improve SNR and reduce parasitic capacitances.

The specific data is subject to PDF, and the above content is for reference

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