2N4870

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Power - Max:	300mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 125°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92

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2N4870 Application Field and Working Principle

Transistors are widely used in the fields of electronics and electricity, such as controlling power and routing signals, and can be divided into two categories, namely bipolar junction transistors (BJT) and field-effect transistors (FET). The 2N4870 is a member of the bipolar junction transistors (BJT) family and comes from the single-mode type.The 2N4870 is a silicon based NPN type bipolar transistor. With its high current gain, the device has a wide range of applications including audio, amplification, regulating signals. It is often used in switching and amplifying applications. In addition, it can be used in the manufacturing of low-cost devices such as amplifiers and power computers.The 2N4870 has a maximum hFE (DC current gain) of 250 and a maximum collector current of 1 A, which makes it ideal for use in low power circuits. The device also has an excellent thermal stability, with a triggering current of 310 mA and a maximum power dissipation of 1.5 W.The working principle of the 2N4870 is based on the four primary components of a bipolar junction transistor (BJT), the collector, the base, the emitter, and the collector-emitter junction. To understand how the device works, it is important to first understand how these components interact.The collector acts as a source for electrons and takes in electrons from the base. The base acts as a gate, blocking most of the electrons from entering but allowing some to pass through. The emitter then acts as a drain, taking away the electrons, while the collector-emitter junction allows the electrons to flow to the emitter. When a current is applied to the base, the transistor switches on, allowing the electrons to be collected at the base and then passed through the transistor to the emitter. This creates a current through the emitter and collector, thus amplifying the signal and controlling power.The 2N4870 is a robust transistor, highly efficient in controlling and amplifying signals and power, while also being easy to work with. Its wide range of applications makes it a popular choice among manufacturers, hobbyists and engineers alike. Moreover, because of its affordability and wide availability, it is often seen in DIY projects and low-cost circuits.

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