Allicdata Part #: | 2N5087_J61Z-ND |
Manufacturer Part#: |
2N5087_J61Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW... |
DataSheet: | 2N5087_J61Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100µA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 40MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5087 |
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A transistor, defined as a three-terminal semiconductor device, is typically utilized to control electrical current flow. The 2N5087_J61Z is a type of transistor known as a bipolar junction transistor (BJT) single. It is important to understand the application field and working principle of this type of transistor.
2N5087_J61Z Application Field
The 2N5087_J61Z is a NPN transistor designed for use in amplification and switching applications. It generally operates at relatively low current. As this part has a low noise figure, it is well suited for use in audio amplifiers. Furthermore, due to its broadband frequency response, it is suitable for use in RF amplifiers.
The 2N5087_J61Z is also suitable for use in low-side switching applications and commutators. It is typically employed in applications where low voltage and low power are the primary requirements.
2N5087_J61Z Working Principle
The 2N5087_J61Z is what is known as a NPN bipolar junction transistor. In such a circuit, current flows between two regions known as emitter and collector, as well as between the emitter and the base. As such, current can be controlled by a voltage applied to the base.
The three connections for the NPN BJT are known as collector (C), base (B) and emitter (E). When a small current is applied to the base, the collector current, determined by the ratio of current gain (hFE), is amplified.
Furthermore, the ratio of hFE also determines the amplifying power of the transistor. The higher the hFE value, the higher the gain. The maximum hFE value for the 2N5087_J61Z transistor is 200. In addition, it works with a voltage of 2.5V to 20V and is capable of handling up to a 500mA current.
2N5087_J61Z Package Options
One of the advantages of the 2N5087_J61Z transistor is that it is available in multiple package options. For example, it can be ordered in either a through-hole or surface mount form, as well as in single, dual or quad packages. Furthermore, due to its low noise, low voltage and low power consumption, the 2N5087_J61Z is suitable for use in a range of applications.
Conclusion
The 2N5087_J61Z is a bipolar junction transistor specially designed for use in amplification and switching applications. The transistor has a NPN structure and three connections; the base (B) spreads current to the collector (C) in proportion to the ratio of current gain (hFE). The transistor operates with a voltage of 2.5 V to 20V and is capable of handling up to a 500mA current. The 2N5087_J61Z is available in multiple package options, making it suitable for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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