2N5089RLRAG

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The 2N5089RLRAG is an NPN bipolar transistor with an amplification factor (hFE) of up to 50. It can be used for a wide variety of applications including switching, driving, regulation and amplifier circuits. The device is suitable for both high-speed and low-power applications, making it an ideal choice for multiple applications.

The 2N5089RLRAG is manufactured using a silicon-based die technology and features a Pb-free thermally enhanced package that provides excellent thermal performance. It is RoHS compliant and its operating temperature range is -55°C to +150°C. The device also has an ESD rating of 2000V.

The 2N5089RLRAG a current gain ranging from 40 to 50 in the common emitter configuration. It has an operating current of up to 500mA, an inter-electrode capacitance of 4-9pF and 3.8V minimum DC BVCEO voltage. It also has a very low VCE(sat) saturation voltage of 250mV and a maximum Pd power dissipation of 600mW. The device is also very fast switching with a minimum Ft frequency of 100MHz.

The working principle of a bipolar transistor is that it uses three terminals called the emitter, base and collector. An electric current is used to modulate the current flowing between the emitter and collector of the device. This is done by applying a voltage to the base which changes the width of the depletion layer between the base and collector. This modulates the current gain of the device and allows for the device to act like a switch or an amplifier. The device can also be used in a variety of different configurations to obtain different results.

The 2N5089RLRAG is a versatile device and can be used in a variety of applications. It can be used as a switch in logic circuits and as an amplifier in audio circuits. It can also be used in low-power applications, such as LED driver circuits or for driving small motors. The device can also be used as a voltage regulator or in current limitation circuits. The device is also suitable for high-speed applications and can be used in frequency multipliers, analog-to-digital converters or communication interface circuits.

In summary, the 2N5089RLRAG is an NPN bipolar transistor with an amplification factor (hFE) of up to 50. It has a current gain ranging from 40 to 50 in the common emitter configuration and a Pd power dissipation of 600mW. The device can be used in a variety of applications and is suitable for both high-speed and low-power applications. It is RoHS compliant and its operating temperature range is -55°C to +150°C. It is an ideal choice for multiple different applications.

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