2N5087TFR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100µA, 5V
Power - Max:	625mW
Frequency - Transition:	40MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5087

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Transistors are an integral part of modern electronics, and the 2N5087TFR is a special type of transistor that can be used in a variety of applications and is particularly advantageous in certain applications. In this article, we will discuss the application field and working principle of the 2N5087TFR single bipolar (BJT) transistor.The 2N5087TFR is a commonly used, reliable and mature single bipolar transistor. It has a wide working range and can be used in a variety of electronic circuits due to its high breakdown voltage, low collector-emitter saturation voltage, and high current gain. The most common application of the 2N5087TFR is in analog and digital circuits, especially in power electronic conversion circuits. Specifically, it can be used as an amplifier, switch, saturating transistor and current regulator.Furthermore, the 2N5087TFR has excellent thermal stability, low dropout characteristics, high-power performance, and low noise. It has a variety of characteristics, including high current gain, high voltage gain, low forward voltage drop, low saturation voltage, low input and output leakage, and low input and output capacitance. All of these characteristics make the 2N5087TFR an ideal choice for a wide range of analog and digital circuits.In terms of its working principle, the 2N5087TFR transistor consists of three terminals, namely the base, the collector, and the emitter. When the base of the transistor is connected to a voltage source higher than the emitter voltage, based on the working principle of a transistor, electrons are drawn away from the emitter, which increases the potential difference between the base and collector. This difference in potential is responsible for the current gain of the transistor, and it is also responsible for the high voltage gain.When more current is drawn away by the collector, the emitter-base junction barrier voltage will drop, and the transistor will enter a region of saturation, which is the second stage of the transistor operation. When the transistor is saturated, its gain decreases due to the high level of current draw and the potential difference between the base and collector decreases. This will cause the collector current to drop and the transistor to enter a region of cut-off, which is the third stage of the transistor operation.The 2N5087TFR is a powerful single bipolar transistor that can be used for a variety of applications. With its excellent thermal stability, low dropout characteristics, high-power performance, and low noise, it is an ideal choice for analog and digital circuits, especially in power electronic conversion circuits. It has a wide working range, enabling it to be used in a variety of electronic circuits, with its high breakdown voltage, low collector-emitter saturation voltage, and high current gain being its selling points. In sum, the 2N5087TFR is an invaluable tool for today\'s electronics.

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