Allicdata Part #: | 2N6212-ND |
Manufacturer Part#: |
2N6212 |
Price: | $ 25.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP POWER TRANSISTOR SILICON AMP |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N6212 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 23.41710 |
Specifications
Series: | * |
Part Status: | Active |
Description
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<p>The 2N6212 is a type of bipolar junction transistor (BJT) that belongs to the single family, and has been widely used in numerous applications. It is a moderately high-power BJT, designed for use in switching power supplies, amplifier circuits, and low voltage audio amplifiers. The 2N6212 has two types: NPN and PNP — both offering good power dissipation and low noise with stable performance. </p><p>The 2N6212 is a bipolar transistor offering low noise and stable performance. It is made using an epitaxial-base process, where the N-type emitter layer is etched into the semiconductor substrate to provide better current flow. This transistor has a current gain of up to 800, a hFE (common-emitter current gain) of typically 800 to 900, and a maximum voltage rating of Vceo of 80V. It also features a maximum collector current Ic of 200mA, a maximum hFE of 800, and a maximum emitter current of 800mV. </p><p>The 2N6212 is an ideal choice for consumer electronics, audio applications such as amplifiers, and rapidly switching power supplies. It offers a variety of features, such as wide operating temperature range, high current gain, low on-state resistance, low switching losses, and a low collector-to-emitter saturation voltage. This means it can be used in high-voltage, high-temperature applications, such as those found in automotive and industrial applications. </p><p>The basic operation of the 2N6212 follows the same principle as the other BJTs. Its main operation is based on the mechanism of forward bias and reverse bias of the base-emitter junction. When the base-emitter junction is forward biased, current passing through the 2N6212 will be amplified, while when the base-emitter junction is reverse biased, current passing through the 2N6212 will be reduced. This allows the 2N6212 to control current sensed through the base-emitter junction. </p><p>The 2N6212 can also be used in other configurations, such as in complementary pairs for DC current gain, or can be used with other transistors to form Darlington pairs for even larger current gain. The 2N6212 can also be used in phase inverters and other switching circuits. In addition, the 2N6212 is also useful for amplifying weak signals, such as those from temperature sensors.</p><p>Overall, the 2N6212 is a reliable and versatile transistor suitable for a variety of applications. It offers a variety of features, such as low noise and stable performance, wide operating temperature range, and high current gain. Due to its lower noise characteristics, the 2N6212 is an ideal choice for audio applications. Moreover, its low switching losses, low on-state resistance, and low collector-to-emitter saturation voltage make it suitable for high-voltage applications, such as those found in automotive and industrial applications.</p>The specific data is subject to PDF, and the above content is for reference
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