| Allicdata Part #: | 2N6280-ND |
| Manufacturer Part#: |
2N6280 |
| Price: | $ 54.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | NPN TRANSISTOR |
| More Detail: | Bipolar (BJT) Transistor |
| DataSheet: | 2N6280 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 49.14320 |
| Series: | * |
| Part Status: | Active |
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2N6280 is a single bipolar junction transistor (BJT). It is a type of transistor widely used in electronic circuits, and is a type of two terminal medium power NPN semiconductor device. These transistors are usually used in the switching circuits and generally have a lowVCEsat(saturation) when compared to other types of transistors. They are also known for their low leakage current, and for their high-power output. The 2N6280 is one of the most widely used and versatile BJTs for industrial and commercial applications.
The 2N6280 is a three-pin device that is designed for medium power applications where a high level of current gain is necessary. The device is comprised of an NPN transistor made from Silicon and Gallium Arsenide, and two leads, the base and the collector. The collector is connected to the power supply, and the base is the input terminal. When a voltage is applied across the base and the emitter, the current flowing between the collector and the emitter is controlled.
The working principle of the 2N6280 BJT is based on the principle of operation of a typical transistor. The 2N6280 has a base current IB and a collector current IC. When the base current increases, acollector current of a certain magnitude is allowed to flow and when the base current decreases, a proportional collector current will be allowed to flow. This relationship between the base and collector current is known as the transistor\'s current gain, or hFE. The collector current is affected by the base current and the hFE, and by the collector-emitter voltage. The amount of current flowing between the base and collector of the transistor is controlled by the transistor\'s base current.
The 2N6280 BJT can be used in a variety of applications. It is commonly used for switching, amplifying and power controlling in various applications such as in audio amplifiers, power supplies, motor control, and high power switching. It is also suitable for use in applications where a high voltage can be applied, such as in television receivers, solenoids, and lamps.In addition, the 2N6280 is suitable for high frequency applications such as radio transmission, small signal amplifiers, and medium power amplifiers.
The 2N6280 is also used as a voltage regulator in a variety of devices, such as in automobile and computer power supplies, controlling the voltage applied to the load. It is also used to control the current flowing through the load, and to regulate the voltage applied to the load. The 2N6280 is also used to control the current flow in circuits in order to reduce power dissipation.
In conclusion, the 2N6280 is a single BJT transistor that is well suited for a variety of applications due to its high current gain, low leakage current and high-power output. It can be used in switching, amplifying and power controlling applications, as well as in voltage regulation and current control.
The specific data is subject to PDF, and the above content is for reference
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| CP527-2N6299-CT | Central Semi... | 0.0 $ | 1000 | TRANS PNP DARL 100V CHIP ... |
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| 2N6235 | Microsemi Co... | 29.8 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
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| 2N6227 | Microsemi Co... | 20.5 $ | 1000 | PNP POWER TRANSISTOR SILI... |
| 2N6284G | ON Semicondu... | -- | 714 | TRANS NPN DARL 100V 20A T... |
| 2N6250 | Microsemi Co... | 32.91 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
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2N6280 Datasheet/PDF