2N6284G Allicdata Electronics
Allicdata Part #:

2N6284GOS-ND

Manufacturer Part#:

2N6284G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 20A TO3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 20A...
DataSheet: 2N6284G datasheet2N6284G Datasheet/PDF
Quantity: 714
Stock 714Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Power - Max: 160W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
Base Part Number: 2N6284
Description

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2N6284G Application Field and Working Principle

The 2N6284G is a type of transistor known as a Bipolar (BJT) Single. It is a general-purpose NPN transistor with a maximum collector-emitter voltage of 30V and a maximum collector current of 2A. It is also available in another version featuring an improved temperature stability and is referred to as a 2N6284GST.

These transistors can be used in a variety of applications, such as amplifiers, switching, and signal processing. For example, the 2N6284G can be used in audio amplifiers, to boost signal strength, or as a switching element in low-power logic circuits. It is also suitable for applications that require high input impedance, such as in piezo transducers.

The 2N6284G operates with a base voltage of 1.5V and a collector-emitter voltage of 0.5V. It can also handle a maximum of 8A in case of pulses or continuous current. The maximum power dissipation is at 25W. It features a gain bandwidth product from 4GHz to 6GHz and is rated for maximum operation frequency at 6GHz.

The working principle of a Bipolar Junction Transistor (BJT) is based on the electrical properties of doped semiconductor materials. The 2N6284G features three terminals: a base, a collector, and an emitter. By varying the voltage present on any two of these terminals, a current can be driven through the third terminal. This current is known as the collector current. In using the BJT as a switch, the current driven through it can be controlled by the bias voltage present on the base terminal.

BJTs are unipolar devices. This means that the device only allows a current to flow in a single direction. The device is usually biased in such a way that it conducts current primarily in one direction. By controlling the bias voltage on the base terminal, the current flow through the transistor can be controlled, allowing it to act as a switch. BJTs are commonly used in analog and digital logic circuits.

In a nutshell, the 2N6284G is a single-transistor device for general-purpose applications, with a range of features that make it ideal for amplifiers, switching, and signal processing. The device operates on the principles of a Bipolar Junction Transistor, in which current is driven through one terminal based on the bias voltage present on two other terminals. Used correctly, the 2N6284G can provide a very effective and reliable solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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