2N6292 Allicdata Electronics
Allicdata Part #:

2N6292OS-ND

Manufacturer Part#:

2N6292

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 70V 7A TO220AB
More Detail: Bipolar (BJT) Transistor NPN 70V 7A 4MHz 40W Throu...
DataSheet: 2N6292 datasheet2N6292 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Power - Max: 40W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: 2N6292
Description

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The 2N6292 is a robust, high-performance bipolar junction transistor (BJT) and is part of the NPN family of transistors. It is especially useful in circuits that require high switching speeds and low power dissipation rates. The 2N6292 is a single transistor, with a maximum collector-emitter voltage of 60V and an operating temperature range of -55° to 125° C. The collector-emitter saturation voltage V CE(sat) is around 0.50V, and the reverse-bias safe operating area (SOA) is superb.

The 2N6292 is most commonly used for high-speed switching applications, such as high-frequency amplifiers and digital circuits. It is also ideal for applications where low voltage and low power are crucial, such as personal electronics and portable devices. The 2N6292 can also be used for replacement in circuits containing other transistors with similar pin layouts, such as the 2N6292 and 2N6292X.

A bipolar junction transistor works on the basis of three regions – the base, collector, and emitter. The base is connected to the input voltage, while the emitter is the output voltage. In between both the emitter and the base is the collector, which is the junction of both the emitter and the base. The output voltage of a bipolar junction transistor is proportional to the input voltage applied to the base, multiplied by some gain factor. When the input voltage is increased, the current flow from the collector to the emitter increases as well, resulting in higher output voltage.

The 2N6292 is provided with built-in heat spreader designs to prevent over-heating, and optimized collection and emitter structures to ensure better performance. It is also designed to work with very low reverse leakage current, and a high beta of up to 150 for the best possible operation.

When it comes to electrical performance, the 2N6292 offers a very low on-state resistance (R ON ), less than 0.5Ω, combined with a low capacitance due to high switching speed. The 2N6292 has a high operating frequency of up to 1GHz and a wide collector-emitter breakdown voltage of up to 80V. Furthermore, the 2N6292 is also very durable and highly reliable.

The 2N6292 is an amazing and powerful transistor that can be used in a wide variety of circuits and applications. Its high-frequency performance makes it an ideal choice for switching, amplifying and digital circuits, while its low on-state resistance and excellent SOA ensures better overall performance. With a reliability rating of around 1 in 100,000 hours, it is sure to last a long time, making it a great choice for any design project.

The specific data is subject to PDF, and the above content is for reference

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