2N7638-GA Allicdata Electronics
Allicdata Part #:

1242-1149-ND

Manufacturer Part#:

2N7638-GA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: TRANS SJT 650V 8A TO276
More Detail: 650V 8A (Tc) (158°C) 200W (Tc) Surface Mount TO-27...
DataSheet: 2N7638-GA datasheet2N7638-GA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: --
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A
Vgs(th) (Max) @ Id: --
Vgs (Max): --
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
FET Feature: --
Power Dissipation (Max): 200W (Tc)
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-276
Package / Case: TO-276AA
Description

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The 2N7638-GA is a single N-Channel MOSFET transistor. It belongs to the family of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), which are used in a wide variety of digital circuits, power management applications, and signal switching. This transistor is fabricated using the latest MOS technology, which delivers a high voltage of operation with excellent transient switching capabilities.

The 2N7638-GA offers an operating voltage rating of up to 100V and a maximum drain current of 1.0A. It also has fast switching speeds and excellent RF performance, enabling it to be used in high-frequency circuits. This device also has excellent power and signal handling capabilities, making it suitable for applications such as amplifier circuits, switch-mode power converters, and direct voltage drive for inductive loads.

The main working principle of the 2N7638-GA MOSFET is similar to other MOSFETs. It is based on controlling the flow of electrons between the source and the drain by an applied electric field. In order for the flow of the electrons between the source and the drain to be controlled, a voltage must be applied to the gate terminal. This applied voltage induces an electric field in the semiconductor material between the source and drain, which then controls the flow of electrons.

The 2N7638-GA is ideal for switching and power management applications. It is highly efficient, fast and stable, and can handle high frequencies. It is also cost-effective, making it suitable for a wide range of consumer, commercial and industrial applications. Its small package size makes it ideal for applications where space is at a premium.

In power management applications, the 2N7638-GA can be used in switch-mode power converters, allowing for much higher efficiency than linear power designs. By controlling the switching frequency with a small voltage applied to the gate of the MOSFET, these converters can deliver high power with excellent efficiency as well as providing a wide range of output current ratings. This makes them ideal for applications such as telecommunications and other power-management applications.

The 2N7638-GA also finds applications in audio amplifier, IC driver, and RF amplifier circuits. Its low on-state resistance, low capacitance, and excellent RF performance make it an ideal choice for these circuits. Its fast switching speeds also make it suitable for high-frequency circuits. It can also be used in output stages of linear amplifiers where high-output current and fast response time is needed.

Overall, the 2N7638-GA is a versatile single N-channel MOSFET transistor which can be used in a range of switching and power management applications. Its fast switching speeds and excellent RF performance make it an ideal choice for high-frequency circuits and other power management applications, while its efficiency and small size make it suitable for a wide range of consumer, commercial, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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