Allicdata Part #: | 1242-1150-ND |
Manufacturer Part#: |
2N7639-GA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | TRANS SJT 650V 15A TO-257 |
More Detail: | 650V 15A (Tc) (155°C) 172W (Tc) Through Hole TO-25... |
DataSheet: | 2N7639-GA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) (155°C) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 15A |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1534pF @ 35V |
FET Feature: | -- |
Power Dissipation (Max): | 172W (Tc) |
Operating Temperature: | -55°C ~ 225°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-257 |
Package / Case: | TO-257-3 |
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The 2N7639-GA is a Junction Field-Effect Transistor (JFET) that utilizes a P-channel design. It is one of the most commonly used JFETs around the world, and is known for its durability and long lifetime. It is used in a variety of applications, including amplifiers, limiters, RF switches, and many other uses where the controlling voltage is low or moderate.
A field-effect transistor is an active semiconductor device that operates by controlling electric field in an insulated gate. This field modulates the movement of charge carriers – electrons and holes – between the source and drain, thus allowing the device to be used as either a switch or an amplifier depending on the application. The electric field is generated by voltage applied to the gate in the form of an AC signal, or by bias voltage applied to the gate and drain from a DC power supply.
The 2N7639-GA is a depletion-mode JFET, and as such, it conducts when a voltage is applied to the gate and shuts off when the gate-source voltage is reduced to zero. Because of this, it can be used as a switch in electronic circuits, as well as for amplification. When a positive voltage is applied to the gate, the depletion gate widens, allowing more electrons to flow from the source to the drain and creating the on-state. When the gate-source voltage is reduced to zero, the depletion region collapses and the channel is blocked, creating the off-state.
A unique feature of the 2N7639-GA is its steep junctions, which gives it a greater tolerance for avalanche conditions and minimizes the likelihood of latch-up. This makes it an ideal choice for applications that require a high switching speed such as high-frequency amplifiers. It also offers excellent thermal stability and relatively low gate capacitance, making it a popular choice in power control applications.
The 2N7639-GA is an ideal choice for a variety of applications, including RF switching, low-noise amplifiers, audio amplifiers, motor control, voltage regulation, and many other uses. With its low threshold voltage, low gate capacitance, and high-speed switching capabilities, the 2N7639-GA isa great choice for a variety of applications where high performance is essential.
In conclusion, the 2N7639-GA is a great choice for applications that require high-speed switching, low noise, and low-power consumption. It offers durability and reliability as well as excellent tolerance for avalanche conditions, making it an ideal choice for a wide range of applications. With its low threshold voltage, low gate capacitance, and high-speed switching capabilities, the 2N7639-GA is a great choice for a wide range of applications that require high performance.
The specific data is subject to PDF, and the above content is for reference
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