2PB709ASL,215 Discrete Semiconductor Products

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The 2PB709ASL,215 transistor is part of a series of transistors manufactured by Toshiba that belong to the single Bipolar Junction Transistor (BJT) family. This type of transistor is also known as an NPN transistor and is designed for low voltage, low power applications.

A Bipolar Junction Transistor is a type of transistor used in electronics and can be used to amplify a signal or switch a current. It consists of two P-type semiconductor layers and one N-type semiconductor layer. An important feature of this type of transistor is that the application of a small voltage to the base can control the current that flows through the collector and emitter terminals.

The 2PB709ASL,215 is an NPN Bipolar Junction Transistor. It has a Collector-to-Emitter Voltage rating of 25V and a Collector-to-Base Voltage rating of 40V. It also has a 300mA Continuous Collector Current rating, making it suitable for power applications. In addition, the transistor has an PNP current gain of 50, which allows it to switch current easily.

The 2PB709ASL,215 transistor is mainly used in low voltage applications. It can be used as an amplifier, switch or oscillator in small circuits with low power demand. In addition, it can be used in mains-powered circuits where robust protection from external spikes and over-voltage transients is required. In areas such as automotive, industrial and telecom systems, this type of transistor is typically used for signal and power control.

The working principle of the 2PB709ASL,215 transistor is simple. When a small voltage is applied to the base of the transistor, the current flowing through the collector and emitter increases. This causes a proportional increase in the voltage across the collector and emitter terminals. This voltage, in turn, can be used to control the current through an external circuit, thus allowing the transistor to act as either an amplifier, switch or oscillator.

In summary, the 2PB709ASL,215 is a single Bipolar Junction Transistor (BJT) manufactured by Toshiba that is designed for low voltage, low power applications. It has a Collector-to-Emitter Voltage rating of 25V, a Collector-to-Base Voltage rating of 40V and a 300mA continuous Collector Current rating. The transistor can be used as an amplifier, switch or oscillator and is mainly used in low voltage applications like automotive, industrial and telecom systems. The working principle of the 2PB709ASL,215 is based on the principle that a small voltage applied to the base translates into an amplified current flowing through the collector and emitter.

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