2PB709AS,115

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The 2PB709AS, 115 Outlet is a silicon-based bipolar transistor specifically designed for power functions. It is a highly reliable device and features a low saturation voltage, good switching speed, and high current gain. This makes it suitable for both low and medium power applications. This device is used in a wide range of applications, including consumer electronics and electrical equipment.

The 2PB709AS, 115 Outlet is a single-junction field-effect transistor (FET). It is composed of four layers of silicon substrate and operates as an active switch. This device is often referred to as a depletion-mode FET or DMFET. It has no gate contacts and works by creating a conductive channel between the source and drains when the substrate potential is changed. This allows it to be used for analog and low-frequency digital switching.

The device has a maximum PN junction breakdown voltage (Vbr) of 115 volts and a maximum power dissipation rate of 7 watts. The maximum input and output capacitance is 28pF and 8pF, respectively. It also has a fairly wide range for the range of usable operating currents, spanning from 1mA to 200mA.

The working principle of the 2PB709AS, 115 Outlet is similar to that of other bipolar transistors. When the collector voltage is increased, the transistor is turned on and allows current to flow from the emitter to the collector. Conversely, when the collector voltage is lowered, the transistor is turned off and prevents any current from flowing. This is known as the common-emitter or PN junction configuration, and it is typically used in power-switching applications.

The 2PB709AS, 115 Outlet is a versatile device and has many potential uses. It can be used in a variety of power applications, such as power regulation and power conversion. Additionally, it can also be used in RF and communications equipment, as well as in automotive and industrial systems. Due to its high current gain, low saturation voltage, and good switching speed, this device is perfect for high-performance applications.

In summary, the 2PB709AS, 115 Outlet is a silicon-based bipolar transistor specifically designed for power functions. It is composed of four layers of silicon and operates as an active switch. This device has a maximum PN junction breakdown voltage of 115 volts and a maximum power dissipation rate of 7 watts. Additionally, it has a wide range of usable operating currents and is suitable for both low and medium power applications. This device is used in a variety of power applications, such as power regulation and power conversion, and can also be used in RF and communications equipment, as well as in automotive and industrial systems.

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