2PB710ARL,215 Allicdata Electronics

2PB710ARL,215 Discrete Semiconductor Products

Allicdata Part #:

1727-4145-2-ND

Manufacturer Part#:

2PB710ARL,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 50V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 50V 500mA 120MHz 250m...
DataSheet: 2PB710ARL,215 datasheet2PB710ARL,215 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.02891
6000 +: $ 0.02514
15000 +: $ 0.02137
30000 +: $ 0.02011
75000 +: $ 0.01886
150000 +: $ 0.01676
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Power - Max: 250mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: 2PB710A
Description

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2PB710ARL,215 Application Field and Working Principle

2PB710ARL,215 is a high-voltage, high-speed switching transistor and is a member of the family of transistors known as Bipolar Junction Transistors (BJT). It is classified as a single-stage type and is commonly used in power switching applications.

A bipolar junction transistor consists of two “P” type semiconductors and one “N” type semiconductor forming a three-terminal device. The three terminals are known as the collector, base and emitter, respectively. Typical BJT’s have a voltage drop of 0.7V between the base-emitter terminals and, for a given power level, a higher voltage drop across the collector-emitter terminals.

The 2PB710ARL,215 is a high-voltage device, able to withstand up to 150 volts at a very high rate of speed. It has a high breakdown voltage threshold and is capable of carrying large currents. This type of transistor is commonly used in power switching applications, such as switching relay coils, electronic ballasts and control applications. It is also used in high-frequency switching applications, such as in high-speed switching of large motors or in highly sensitive systems.

The 2PB710ARL,215 works on the principle of PN junction, where the two P-type semiconductors and one N-type semiconductor are connected. The PN junction forms an electric field and when the base is forward biased, current can flow through the transistor. The base-emitter junction is identical to a normal diode in operation, but the collector-emitter junction acts as an amplifier. The current flowing in the transistor is therefore amplified by the ratio of collector current to the base current. The output current is controlled by the base current, and the output voltage is controlled by the voltage applied to the drain.

By using appropriate circuitry and by changing the applied voltage across the two terminals, the output current can be controlled. This makes the 2PB710ARL,215 ideal for power switching applications and provides an efficient way to turn on and off electronic components. The 2PB710ARL,215 can also be used in various other applications such as amplifiers and signal switching.

In conclusion, the 2PB710ARL,215 is a high-speed, high-voltage bipolar junction transistor and is used in many power switching applications. It has a PN junction that is able to amplify the current flowing through it, allowing for precise control of current and voltage levels. This makes it ideal for use in applications such as power switching, amplifiers and signal switching.

The specific data is subject to PDF, and the above content is for reference

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