2PB710ASL,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-4146-2-ND |
Manufacturer Part#: |
2PB710ASL,215 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 50V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 140MHz 250m... |
DataSheet: | 2PB710ASL,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03180 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 150mA, 10V |
Power - Max: | 250mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | 2PB710A |
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Transistors are among the most important components used in the electronics industry and provide the means of controlling current flow in a circuit. Bipolar junction transistors (BJT) are one of the two transistor types, with the other being the field-effect transistor. The BJT consists of three terminals, a base, an emitter, and a collector. The 2PB710ASL,215 is a single BJT transistor which can be used for various applications.
The base is the control input to the transistor, with the current through the base controlling the current flow through the other two terminals. The current flowing into the base from the outward power source controls the current through the other terminals by switching the transistor on and off. When the current through the base is at its peak, the transistor allows for a high current through the collector and emitter, and when the base current is low, the collector-emitter current is lowered significantly.
The 2PB710ASL,215 transistor offers a good combination of small size and high performance parameters. Its high collector current and large collector power dissipation make it Be suitable for low and medium power applications. This transistor is designed for switching applications and the voltage gain is low, which means it is only suitable for applications where low voltage gain is required.
The 2PB710ASL,215 transistors offer good noise figure and are available in both NPN and PNP configurations. These transistors are also capable of operating over a wide voltage range, making them suitable for a variety of high power, switching, and amplifier applications.
The 2PB710ASL,215 transistors have a variety of applications, such as amplifiers, current limiters, detectors, switches, and converters. They can be used in a range of different circuits, such as power amplifiers and motor control systems, or for AC to DC converters. This device can also be used as a driver for low-voltage circuits, as it has low gain and is capable of providing high output current.
The working principle of the 2PB710ASL,215 transistor is relatively simple. When this device is switched on, electrons from the base terminal join the negatively charged emitter, which creates a current flow from the base to the collector. This flow of electrons increases the voltage inside the collector, allowing current to flow from the collector, to the emitter and reducer of the transistor. As the current decreases, the voltage inside the collector decreases, reducing the amount of current and allowing the device to switch off again.
In conclusion, the 2PB710ASL,215 is a single BJT transistor that can be used for various applications. It offers a combination of small size and high performance parameters and is available in multiple configurations. Its applications include amplifiers, current limiters, detectors, switches, and converters, and it is also suitable for high power, switching, and amplifier applications. Its working principle is relatively simple, and it operates based on the flow of electrons from the base to the emitter and collector.
The specific data is subject to PDF, and the above content is for reference
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