2PB709ASW,115 Allicdata Electronics
Allicdata Part #:

2PB709ASW,115-ND

Manufacturer Part#:

2PB709ASW,115

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 45V 0.1A SOT323
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 80MHz 200mW...
DataSheet: 2PB709ASW,115 datasheet2PB709ASW,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02282
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: 2PB709A
Description

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The 2PB709ASW transistor is a type of Single Bipolar Junction Transistor (BJT), which is a three-terminal semiconductor device known for its ability to amplify an electronic signal, convert electrical power into radio frequency power, and switch electrical currents on or off. The 2PB709ASW transistor can be used in a variety of applications, and in this article, the field of application and its working principle will be discussed.

The 2PB709ASW transistor has a wide range of applications including audio amplifiers, switch mode power supplies, motor control, and semiconductor logic. In audio amplifiers, this transistor is typically used as a voltage amplifier to increase the efficiency of the amplifier. When used in Switch Mode Power Supplies (SMPS), this transistor is used as a switch. The transistor is used in Transistor-Transistor Logic (TTL) applications such as in building integrated circuits. When used with other electronic components, such as capacitors and resistors, this transistor can also be used in motor control.

The working principle of the 2PB709ASW transistor is based on the fact that it is a 3-terminal semiconductor device. It has a base (B), emitter (E) and collector (C) terminal. A small current at the base terminal controls the current flowing between the collector and the emitter. The base current controls the amount of current that flows between the collector and the emitter, allowing the current to either increase or decrease as required. The current at the collector terminal is proportional to the current at the base terminal, and this is the principle behind the transistor’s amplification capability.

The 2PB709ASW transistor has several advantages and disadvantages. One of the advantages of the 2PB709ASW transistor is that it is a 3 terminal device, which makes it easy to use in circuits. Additionally, this type of transistor is designed to handle high voltages and currents, making it suitable for high power applications. Moreover, this type of transistor is also very reliable, and it can be used in applications that require long-term stability and performance.

However, the 2PB709ASW transistor also has some drawbacks. The current gain of this type of transistor is relatively low, which can limit its use in some applications. Additionally, this type of transistor is sensitive to temperature changes and is therefore not suitable for applications that require high temperature stability. Finally, the 2PB709ASW transistor is not suitable for use in RF applications as the 2PB709ASW transistor has poor RF characteristics.

In conclusion, the 2PB709ASW transistor is a type of Single Bipolar Junction Transistor (BJT) which is known for its ability to amplify an electronic signal, convert electrical power into radio frequency power, and switch electrical currents on or off. It can be used in a broad range of applications, including audio amplifiers, switch mode power supplies, motor control, and semiconductor logic. This transistor works by allowing a small current at the base terminal to control the current flowing between the collector and the emitter. Though this transistor has several advantages, it also has some drawbacks which can limit its use in some applications.

The specific data is subject to PDF, and the above content is for reference

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