2PB710ARL,235

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The 2PB710ARL,235 is a transistor device classified as a Bipolar Junction Transistor (BJT) and specifically, a single-type BJT. These transistors are three-terminal semiconductor devices in which the current is controlled by one low-power signal. As a result, they are often used in a wide range of applications.

The 2PB710ARL,235 is a bipolar transistor which includes a collector, an emitter and a base. When bias voltage is applied to the base-emitter junction, electrons in the base region become sufficiently mobile to allow them to become part of the base current. The amount of base current controls the amount of collector current, thus allowing current amplification to occur. The current gain of the transistor is often described as h_FE. The h_FE of the 2PB710ARL,235 is a minimum of 10 and a maximum of 240.

The 2PB710ARL,235 can be used in a variety of applications. It is suitable for use in high-frequency, audio, switching and linear applications. It is also suitable for use in applications in which low collector-emitter saturation voltage is desired, such as relay and solenoid drivers. Additionally, it can be used in applications that require low collector-emitter voltage drop (VCE(SAT)). It is also suitable for use in applications that require a high current gain, such as logic circuits and amplifiers.

The maximum collector-emitter voltage of the 2PB710ARL,235 is -50V and the DC collector current ranges from 0.3A to 0.6A. The maximum collector power dissipation is 0.625W and the maximum storage and operating junction temperatures are +125°C and +150°C, respectively. Furthermore, the maximum thermal resistance junction-to-ambient is 5°C/W. It is available in an SC-62 package.

In summary, the 2PB710ARL,235 is a bipolar junction transistor especially designed for high-frequency, audio, switching and linear applications. It is characterized by low collector-emitter saturation voltage and high current gain, making it suitable for use in relay and solenoid drivers, logic circuits and amplifiers. This device has a maximum collector-emitter voltage of -50V, a collector current ranging from 0.3A to 0.6A and a maximum collector power dissipation of 0.625W. Additionally, it is available in an SC-62 package and offers a maximum junction-to-ambient thermal resistance of 5°C/W.

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