2SA06830R Allicdata Electronics
Allicdata Part #:

2SA06830R-ND

Manufacturer Part#:

2SA06830R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 25V 1A TO-92L
More Detail: Bipolar (BJT) Transistor PNP 25V 1A 200MHz 1W Thro...
DataSheet: 2SA06830R datasheet2SA06830R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L-A1
Description

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The 2SA06830R bipolar junction transistor is a constituent component for many circuits that require a three-terminal active device, and is widely used in all kinds of electronic circuits, from complex simulations to simple hobbyist projects. This article will describe the application field and working principle of the 2SA06830R.

The 2SA06830R is a NPN high-frequency transistor usually used as a small-signal amplifier. It is capable of sinking and sourcing a decent amount of current, making it applicable in many circuits requiring high performance and current stability.

One feature of the 2SA06830R which makes it stand out from the crowd is its high switching capability. The transistor is capable of switching at extremely high frequencies, making it very helpful in circuit designs targeting high-frequency applications.

The 2SA06830R can also be used in low voltage logic circuits as it can handle a low voltage operating input, making it suitable for many low power logic applications where power needs to be conserved.

The circuit symbol of the 2SA06830R is shown in Figure 1. It consists of three terminals: the collector (the middle terminal), base (the left terminal) and the emitter (the right terminal).

Figure 1. Circuit symbol of the 2SA06830R transistor.

The operation of the 2SA06830R can be explained through the following four steps. Firstly, the base-emitter junction works like a diode, allowing current only in one direction (from the emitter to the base). This junction enables the transistor to be used as a switch. Secondly, when a voltage is applied between the base and the collector, electrons from the emitter are drawn towards the collector. This results in an amplified current flow from the collector to the emitter. Thirdly, when the voltage in the base decreases, the number of electrons drawn towards the collector will decrease and the current flow from the collector to the emitter will also decline. Finally, when the voltage between the base and the collector is removed, the current flow between the collector and the emitter will stop.

In addition, the 2SA06830R has another feature known as the current gain. The current gain is defined as the ratio between the collector current and the base current. The larger the current gain, the better amplification effect the transistor has.

In conclusion, the 2SA06830R is a versatile NPN high-frequency transistor which can be used in a wide range of applications. Its advantages include high-speed switching capability, low voltage operation, and a good current gain. With a wide variety of applications and characteristics, the 2SA06830R is a great choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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