2SA06840S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SA06840S is a single-junction bipolar junction transistor (BJT). It is used as an electronic switch in a variety of electronic devices. This datasheet outlines its application field and working principle.

Application

The 2SA06840S transistor is used in applications where a high switching speed is required and a high current carrying capacity is necessary. The 2SA06840S transistor can handle up to 3A of collector current, allowing it to be used in DC, audio and motor applications.

The 2SA06840S transistor is typically used in applications such as differential amplifiers, audio amplifier circuits, voltage comparators, oscillators, power supplies, and thyristor circuits. Furthermore, it can be used in battery-powered applications, such as portable audio players. It can also be used in circuits with high frequency oscillations, such as metal detectors.

Physical Characteristics

The 2SA06840S is a small-signal transistor with an NPN structure and three terminals: base, collector, and emitter. It has a dual-in-line plastic package, with a lead pitch of 0.1 inch (2.54 mm). It has a transition frequency of 0.4GHz, an operating junction temperature of -55°C to 150°C and a storage temperature of -55°C to 150°C.

Working Principle

The 2SA06840S is a NPN junction transistor; it uses the principle of majority carrier conduction to amplify current. The transistor has three terminals: a base, a collector, and an emitter. The majority carriers (electrons) flow from the emitter through the base to the collector which is connected to the VDD power supply. This allows current to flow through the transistor which controls the amount of current flowing through the collector-emitter region of the transistor.

In the forward-active mode, a small current (IB) at the base is coupled to the emitter-collector junction such that a large current (Ic) flows in the collector. This is because the emitter-collector junction is forward biased and the base-emitter junction is reverse biased. This allows the transistor to amplify current in the forward mode.

In the cutoff mode, the base current (IB) is reduced to zero and the current from the collector to the emitter (Ic) is also reduced to zero. This is because the base-emitter junction is reverse biased and the collector-emitter junction is forward biased. This allows the transistor to reject current in the reverse mode.

The biasing of the base-emitter junction determines the operating mode of the transistor i.e. cut-off (IB < IC), saturation (IB > IC), or active (Ib = Ic). Distortion is minimized when the base current is accurately controlled by using the VBE (base-to-emitter voltage) which is the key parameter of the transistor.

Conclusion

The 2SA06840S single-junction bipolar junction transistor is a versatile device used in a variety of electronic applications. It features low distortion, high switching speed and a high current carrying capacity. Its application field includes audio, motor and battery-powered applications. Its working principle is based on majority carrier conduction, with current being amplified or rejected depending on the biasing of the transistor.

The specific data is subject to PDF, and the above content is for reference