2SA07200RA Allicdata Electronics
Allicdata Part #:

2SA07200RATB-ND

Manufacturer Part#:

2SA07200RA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 625m...
DataSheet: 2SA07200RA datasheet2SA07200RA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Base Part Number: 2SA07200
Description

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The 2SA07200RA is a bipolar junction transistor (BJT) used for multiple applications. It is classified as a single low-power NPN Silicon transistor and is used to amplify or switch electrical signals.

The 2SA07200RA was designed to handle both moderate and low power applications. Its low noise level and low breakdown voltage make it ideal for use in low noise audio amplifiers. Its high DC current gain also makes it necessary for it to be used in multiple DC amplification applications.

The 2SA07200RA is most commonly used in applications such as small audio amplifiers, audio boosters, high-speed switching circuits, and current regulators. Its performance capabilities and design make it a very useful component for the construction of a variety of circuits.

The physical working principle of the 2SA07200RA is relatively simple. As a NPN type transistor, it consists of three leads arranged in an orderly manner. The two outer bases are connected to the primary collector and emitter leads, while the central Base lead is connected to the base of the transistor.

When current flows through the base lead, it creates a voltage differential across the transistor’s base-emitter junction, due to the current amplification mechanism of the transistor. This generates an amplified current passing through the transistor’s collector-emitter junction, resulting in increasing the total current passing through the emitter and collector of the transistor.

Operation of this transistor can also be explained using the principles of transistor switching. The voltage across the transistor’s base-emitter junction allows current to flow, but the current is not high enough to switch the transistor from an off state (when no current is flowing) to an on state (when current is flowing). A higher voltage across the base-emitter junction of the transistor will cause an increase in current through the collector and emitter of the transistor, allowing it to switch from an off state to an on state.

The performance of 2SA07200RA transistor can be further enhanced when coupled with other components. It can be used to increase the current gain, decrease the power consumption, create a buffer between two components, and also provide voltage protection features.

In conclusion, the 2SA07200RA is a versatile and high-performance transistor which can be used for a variety of applications. Its low power requirements, low noise levels, and high DC current gain make it suitable for a range of audio, switching, and current regulation applications. Its physical working principle offers a simple explanation of how it amplifies electrical signals, by creating a voltage differential across its base-emitter junction which increases current passing through the transistor’s collector-emitter junction. By combining the 2SA07200RA transistor with other components, its performance can be advanced to higher levels.

The specific data is subject to PDF, and the above content is for reference

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