Allicdata Part #: | 2SA08790Q-ND |
Manufacturer Part#: |
2SA08790Q |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 200V 0.07A TO-92L |
More Detail: | Bipolar (BJT) Transistor PNP 200V 70mA 80MHz 1W Th... |
DataSheet: | 2SA08790Q Datasheet/PDF |
Quantity: | 1000 |
400 +: | $ 0.43987 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 70mA |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92L-A1 |
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2SA08790Q Application Field and Working Principle
2SA08790Q is classified as a single bipolar junction transistor (BJT) which finds numerous applications in digital and analog circuit designs. It is commonly used as an amplifier, and it is designed to handle up to 1.2A of current. In addition, the 2SA08790Q has a high collector-to-emitter breakdown voltage of 800V and the necessary thermal resistance for reliable use.
The base-emitter element of the 2SA08790Q functions as a resistor. This effect is known as the Early Effect. In this case, the voltage drop across the base-emitter junction decreases as current increases. This means that when a large current is applied, the base-emitter junction can handle more current than would be possible with a single BJT.
The collector-emitter junction of the 2SA08790Q operates as a diode. This condition is known as forward-biased diode operation. There are two types of forward-biased diode operation. The first is a junction field effect transistor (JFET) which works by having a high level of current flow through the base-collector junction. The second is an insulated-gate bipolar junction transistor (IGBJT) which works by having a moderate level of current flow through the collector-emitter junction.
The collector-emitter junction of the 2SA08790Q is also protected against reverse biasing. This protection is provided by a built-in diode which helps prevent any damage due to a sudden large reverse current. In addition, the collector-emitter junction of the 2SA08790Q has a high power rating of 800V. This makes it suitable for use in high voltage circuits.
In a practical circuit, the 2SA08790Q can be used as an amplifier, switch or as a driver in a power device like a relay. In each case, it can provide good performance characteristics with the right design considerations. In addition, the 2SA08790Q is capable of very low static power consumption and can help reduce total power consumption of the system.
The 2SA08790Q is a versatile and reliable BJT transistor that can be used in a variety of applications. Thanks to its ability to provide low noise operation and its high collector-to-emitter breakdown voltage, it is suitable for use in a range of digital and analog design requirements. As it has a high power rating, the 2SA08790Q can also be used for reliable power-switching applications.
The specific data is subject to PDF, and the above content is for reference
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