2SA07770R

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	130 @ 150mA, 10V
Power - Max:	1W
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92L-A1

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<p>The 2SA07770R is a single bipolar junction transistor (BJT) designed specifically to meet the performance requirements of medium and high speed switching applications. This type of transistor is especially suited for use in high-power switching applications, including power amplifiers, capacitive discharge devices, etc. The key feature of this transistor is its low on-state voltage drop, which makes it an ideal device for a wide range of applications.</p><p><b>2SA07770R Application Field</b></p><p>The 2SA07770R is suitable for use in a range of medium to high speed switching applications. It is particularly suitable for use in amplifiers, power supplies, car audio amplifiers, audiovisual equipment, motor drives and other high power switching applications. The device has a low on-state voltage drop, which makes it especially well suited for use in high current switching applications, where efficiency and current level are the determining factors in use.</p><p><b>Working Principle</b></p><p>The 2SA07770R is a current-controlled device, which allows current to flow through the collector and emitter when a voltage is applied to the base. When the voltage is removed, the device shuts off, preventing current from flowing between the collector and emitter. The amount of current that flows through the collector and emitter can be adjusted by changing the voltage at the base. This makes the 2SA07770R especially useful in high-speed switching applications.</p><p>The 2SA07770R has a low on-state voltage drop, which makes it an excellent choice for applications where power efficiency is important. The device also has a low reverse transfer resistance, meaning that it is resistant to reverse currents and has high immunity to noise. This makes it suitable for use in applications where noise levels are high.</p><p>The device has a maximum collector-emitter voltage of 250V and a maximum base-emitter voltage of 9V. It is rugged and reliable, and has a long operating life. The device is designed to handle high power switching, and its low electrical noise output makes it suitable for use in a wide range of applications.</p><p>In summary, the 2SA07770R is an excellent choice for a range of medium and high speed switching applications. Its low on-state voltage drop, low reverse transfer resistance and high noise immunity make it an ideal device for a wide range of applications, including power amplifiers, capacitive discharge devices and other high power switching.</p>

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