2SA06840R Allicdata Electronics
Allicdata Part #:

2SA06840R-ND

Manufacturer Part#:

2SA06840R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 1A TO-92L
More Detail: Bipolar (BJT) Transistor PNP 50V 1A 200MHz 1W Thro...
DataSheet: 2SA06840R datasheet2SA06840R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L-A1
Description

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A 2SA06840R is a bipolar junction transistor (BJT) primarily used for switching or amplifying electronic signals. Generally, bipolar transistors are classified depending on their shape, packaging, or structure. The 2SA06840R comes from the single family of transistors, which refers to transistors that has only one base terminal (the collector), while it also has two other terminals, the source and the drain. As such, this type of transistor is named after its connections, which are similar to how a single diode is connected. The 2SA06840R is also known as a NPN transistor, meaning it requires a positive current for the base-emitter junction to be active.

The 2SA06840R is widely used in a variety of electronics applications. It has a wide range of current-handling at a specific voltage, typically between 4 and 15 amps and is somewhat temperature resistant. This type of transistor is mainly used as a switching element in any linear circuit due to its ability to produce either a low or a high state based on the operating conditions. In addition, it can be used as an amplifier because it can sustain relatively large voltage and current outputs.

The 2SA06840R is distinguished by its high breakdown voltage and its low noise characteristics. It is mainly used in low-voltage applications, however it can also be used in high-voltage circuits having a breakdown voltage of up to 400V. The transistor also features low gate leakage current and an off-current, which increases its reliability and durability.

The working principle of a 2SA06840R transistor follows the same principle as that of a diode but utilizes three different components instead of one. When a base current is applied, electrons from the emitter are pushed into the base region. The base-collector junction then becomes forward biased and the collector collects most of the electrons leaving the base, resulting in a current flow between the collector and the emitter. Similarly, when the base current is removed, the transistor switches off and no current flows through the collector-emitter junction.

In conclusion, the 2SA06840R is a single bipolar junction transistor suitable for a broad range of electronics applications, mainly used in either switching or amplifying operations. It is also characterized by its high breakdown voltage, low noise characteristics, and its dependable low gate leakage current and off-current.

The specific data is subject to PDF, and the above content is for reference

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