2SA2127-AE Allicdata Electronics
Allicdata Part #:

2SA2127-AEOSTB-ND

Manufacturer Part#:

2SA2127-AE

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 2A TO92-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 420MHz 1W Thro...
DataSheet: 2SA2127-AE datasheet2SA2127-AE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1W
Frequency - Transition: 420MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: 3-MP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SA2127-AE is a single bipolar junction transistor (BJT) semiconductor component, with a variety of different package styles, such as USM, SMD, and SOT-23. This single BJT comes equipped with a good power gain, which makes it suitable for a wide range of applications.

The collection of applications for the 2SA2127-AE are broad, from voltage regulation and current sensing to loudspeaker protection and LED lighting. For applications involving amplifier or switching, 2SA2127-AE can offer a great performance. 2SA2127-AE can also be used for RF power applications and for wireless communications. Additionally, the 2SA2127-AE is commonly employed in motor control applications, audio systems, and military applications.

On physical and technical levels, the 2SA2127-AE has a wide operating temperature range of -55°C to +150°C. The current gain range (continuous) is between 50 and 300, and the power gain (continuous) ranges from 10 to 100. It features a collector – emitter voltage (Vce) of up to 45 V, and a collector current (Ic) of up to 500 mA.

The working principle of the 2SA2127-AE is to pass a current flow between the collector and the emitter port, which happens under the action of the electrons. This transistor can be used as an amplifier, or a switch, or as a combination of both. An amplifying action is achieved when electrons come from the base and inject holes into the collector zone, creating positive feedback so that the voltage amplified across the transistor’s terminal. On the other hand, the action of switching happens when the collector current is switched on or off in response to a control signal coming from the emitter. Here, the current flow is controlled by the voltage applied to the base.

In summary, the 2SA2127-AE is a versatile single BJT semiconductor component, featuring a relatively broad application field and good power gain. Its internal working principle relies on the transferring of electron flows between the collector and the emitter port, to be used in applications such as lamp protection and RF amplifiers, or for switching purposes. All of these make the 2SA2127-AE an ideal choice for various engineering projects.

The specific data is subject to PDF, and the above content is for reference

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