Allicdata Part #: | 2SA216200LTR-ND |
Manufacturer Part#: |
2SA216200L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 12V 0.5A SSSMINI-3 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 500mA 200MHz 100m... |
DataSheet: | 2SA216200L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 10mA, 2V |
Power - Max: | 100mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SSSMini3-F1 |
Base Part Number: | 2SA2162 |
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The 2SA216200L is a PNP type transistor created by a Japanese manufacturer named Sanken. The 2SA216200L is a high-performance transistor manufactured with advanced technology. It is designed with a high frequency operation, high gain, and wideband amplification. This transistor can be used in a wide range of applications, including low noise amplifiers, audio power amplifiers, and preamplifiers. In addition, it is a great choice for RF transmitters and receivers, as well as switching circuits and DC circuit applications.
The 2SA216200L has a PNP semiconductor structure. This means that it has two layers of semiconductor material. The first layer is an emitter, and the second layer is a base. The third layer, collector, is typically semiconductor-free. The 2SA216200L is commonly used for applications such as low-noise amplifiers and RF transmitters, where high frequency operation, a high power rating, and wideband amplification are required.
The 2SA216200L is designed with a low noise amplification, low temperature coefficient, and high power rating. It also has a high mobility factor, which is beneficial for RF transmitters and receivers. The 2SA216200L is usually operated at a frequency of up to 1GHz, which allows for optimal performance in RF applications. In addition, it is capable of handling high voltages and currents.
The working principle of the 2SA216200L is relatively simple. When current passes through the 2SA216200L, it will create an amplified output voltage. The voltage amplifier works by amplifying the input voltage and increasing it to a higher level. The output voltage is determined by the base-emitter voltage and the current gain (β). The output of the transistor is dependent on the current flowing through the transistor, which is determined by the applied voltage.
The 2SA216200L is a great choice for a wide range of applications due to its high power rating and low noise amplifications. The high frequency operation, high mobility factor, and wideband amplification make it suitable for use in RF transmitters and receivers, audio power amplifiers, low noise amplifiers, switching circuits, and DC circuit applications. With its advanced technology and reliable performance, the 2SA216200L is a great choice for either analog or digital circuits.
The specific data is subject to PDF, and the above content is for reference
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