2SA20570P

Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 1A, 4V
Power - Max:	2W
Frequency - Transition:	90MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220D-A1
Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 375mA, 3A

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The 2SA20570P is a single bipolar junction transistor (BJT) designed primarily for applications in the audio and consumer industries. It features high gain, low noise, and low power consumption, making it ideal for many consumer and industrial electronics applications. This device is capable of providing up to 250 mA of current. The 2SA20570P is available in a TO-220 package with an emitter-base breakdown voltage of 60V.

The main function of a bipolar junction transistor is to change an electrical current when a small voltage is applied to its base. It is composed of three regions, two of which are semiconductor materials, where the current is amplified, and the third region, which provides the necessary bias voltage. In a BJT, two base regions are formed across an emitter region, and the type of BJT is determined by the semiconductor materials and doping. In the case of the 2SA20570P, it is an NPN type BJT. This means that the emitter and collector terminals are heavily doped with electrons, and the base region is lightly doped in comparison.

An electric current flows from the emitter to the collector when the transistor is switched on. To turn the transistor on the base terminal needs to be supplied with a small electrical signal. This signal will cause an amplification of the current between the two terminals, resulting in an increased current between the collector and emitter terminals, which can turn devices such as motors or lights on and off. The amount of current that can pass through the transistor is determined by the voltage applied to the base terminal. If the base voltage increases, the collector current increases and vice versa.

In terms of application fields, the 2SA20570P is suitable for use in amplifiers and switches, as well as in audio and vide equipment, such as amplifiers, mixers, and receivers. Its design is also excellent for use in automated telecommunications and industrial control systems. Its higher gain and lower noise capabilities make it well-suited for the high-fidelity audio market, where the emphasis is on a clear, natural sound.

The 2SA20570P also has a range of electrical characteristics that make it suitable for many applications. It has high gain, low noise, and low power consumption. Its maximum collector-base breakdown voltage is 60V, while its maximum collector current is 250 mA. Its DC current gain is 40 dB, while its maximum power dissipation is 2W. Other important characteristics include its storage temperature range of -55°C to + 150°C, and its operating temperature range of -55°C to + 125°C.

In conclusion, the 2SA20570P is a single bipolar junction transistor designed for use in audio and consumer applications, as well as in industrial control and automated telecommunications systems. Its features include high gain, low noise, and low power consumption, making it versatile and a great choice for many applications. Its range of electrical characteristics makes it suitable for many applications, and its low cost makes it a good value for money.

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