Allicdata Part #: | 2SA2210-EPN-1EX-ND |
Manufacturer Part#: |
2SA2210-EPN-1EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 20A |
More Detail: | Bipolar (BJT) Transistor PNP 50V 20A 140MHz 2W Thr... |
DataSheet: | 2SA2210-EPN-1EX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 350mA, 7A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 1A, 2V |
Power - Max: | 2W |
Frequency - Transition: | 140MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3SG |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SA2210-EPN-1EX is a transistor categorized under transistors - bipolar (BJT) - single. It is a high-speed switching type bipolar transistor, mainly used in power switching circuits. This type of transistor is widely used in audio frequency amplifiers and amplifiers. The transistor has two pins, the base pin and the emitter pin. The base pin is the control pin, while the emitter pin is the power pin.
The main application field of the 2SA2210-EPN-1EX is in switching circuits, either for powering on and off electronic components, or for controlling their operation. It is normally used as a switch, meaning that it can be either fully on or fully off, with no intermediate state. The current gain of this transistor is usually in the range of 50 to 500. It has relatively low power consumption compared to other types of transistors.
The working principle of this transistor is based on the diffusion production of majority carriers and minority carriers. The base of the transistor is positively charged, creating a depletion layer of excess majority carriers. When a current from the base passes through the depletion layer, it attracts the minority carriers which then enter the base, resulting in a base current.
The base current then acts as a control current which varies with the input current. As it varies, the current in the emitter pin decreases and increases, thereby regulating the current in the collector. This is the principle behind the transistor action. As the base current decreases, the emitter current and the collector current also decreases, and when the base current increases, so do the emitter and collector current.
The design of the 2SA2210-EPN-1EX is the same as that of other BJT devices, but it incorporates improved features to increase its performance. One of these improvements is its breakdown voltage, which is greater compared to that of other devices, allowing for greater power handling capability. The 2SA2210-EPN-1EX also has higher input impedance and lower output impedance, making it ideal for switching applications situations when the output load is likely to vary.
The 2SA2210-EPN-1EX is a versatile and reliable transistor, which can be used for a variety of power switching applications. Its wide operating range and high speed switching capability make it a popular choice for many engineers. It is widely available, and can be easily obtained from distributors and online stores.
The specific data is subject to PDF, and the above content is for reference
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