2SB07100QL Allicdata Electronics
Allicdata Part #:

2SB07100QLTR-ND

Manufacturer Part#:

2SB07100QL

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 25V 0.5A MINI 3P
More Detail: Bipolar (BJT) Transistor PNP 25V 500mA 200MHz 200m...
DataSheet: 2SB07100QL datasheet2SB07100QL Datasheet/PDF
Quantity: 3000
3000 +: $ 0.07605
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Base Part Number: 2SB0710
Description

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2SB07100QL is a type of bipolar junction transistor (BJT). It is a single bipolar transistor which is usually used in applications that require high current gains, high switching speeds, and high forward transfer admittances. It can also be used in high frequency applications, such as radio frequency (RF) amplifiers and frequency synthesizers.

The 2SB07100QL transistor is an NPN type device. It has an active collector-base junction that controls current flow between the collector and the base. It is composed of three layers of semiconductor material: the base layer, the collector layer and the emitter layer. The base layer is used to control the current flow between the collector and the emitter. It is made from a heavily doped N-type semiconductor material.

The collector layer is then made from a lightly doped P-type semiconductor material. This layer is used to collect the electrons that flow from the emitter layer when the base layer is biased. The emitter layer is made from a heavily doped P-type material and it is used to inject electrons into the collector layer. It is responsible for the forward current gain of the transistor.

The 2SB07100QL transistor has a maximum collector current of 2 amperes, a maximum collector-emitter voltage of 40 volts, a maximum power dissipation of 500 milliwatts, and a maximum frequency of 250 megahertz. It has a fairly low noise level, which makes it suitable for use in low noise circuits. It also has a low feedback capacitance, which allows it to be used in high speed switching applications.

In order to properly operate this type of transistor, it must be properly biased. This is done by controlling the voltage that is applied between its base and its emitter. When it is properly biased, it will be able to operate in its active region where it can amplify signals. Depending on the voltage level of the base, the current that passes through the transistor can be increased or decreased.

The 2SB07100QL transistor is mainly used in digital circuits, such as logic gates, as well as in analog circuits like amplifiers. It is also used in high frequency applications, such as RF amplifiers and frequency synthesizers, due to its low noise level and high forward transfer admittance. Finally, it is also used in power circuits, such as switching regulators, due to its high current gains and switching speeds.

The specific data is subject to PDF, and the above content is for reference

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