Allicdata Part #: | 2SB0940AP-ND |
Manufacturer Part#: |
2SB0940AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 180V 2A TO-220F |
More Detail: | Bipolar (BJT) Transistor PNP 180V 2A 30MHz 2W Thro... |
DataSheet: | 2SB0940AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 180V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 2W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-A1 |
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The 2SB0940AP Transistor is an NPN SIP (Single-in-line Package) Transistor. It comes from the family of Bipolar Transistors. These types of transistors have three terminals, namely Emitter, Base, and Collector. They are used extensively for switching and amplifying applications.
The 2SB0940AP is an NPN SIP transistor with a voltage rating of 30 volts and a collector dissipation power of 0.5 watts. It has a current gain of 600 and a switching speed of 10 microseconds. The maximum collector current that the 2SB0940AP transistor can handle is 0.2 amperes and it has a Bandwidth of 2.5 MHz. It is also capable of operating at temperatures up to 175°C. This makes it suitable for applications requiring high temperature performance.
The main application fields of the 2SB0940AP transistor are Power amplification, switching, broadband amplifiers and high-speed switches. It is suitable for use in switching power supplies, audio amplifiers and other small-signal applications that require high-speed switching. This transistor can also be used as a buffer, an output driver, and for low-frequency amplification.
The working principle of the 2SB0940AP transistor is that of a current-controlled device. When the voltage is applied to the base (B) of the transistor, it allows a current to flow from the collector (C) to the emitter (E). This current flow is proportional to the voltage at the base times the current gain (hFE) of the transistor. By controlling the voltage at the base, the current that flows between the collector and emitter can be adjusted. This allows the 2SB0940AP transistor to be used for both switching and amplifying applications.
The 2SB0940AP transistor is a reliable and versatile device. It is used in a wide range of applications due to its advantages, such as its low temperature coefficient, high voltage rating, and current gain. This makes it ideal for power amplification, switching, and broadband amplifier circuits. It is also widely used in high-temperature applications due to its 175°C operating temperature.
The specific data is subject to PDF, and the above content is for reference
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