Allicdata Part #: | 2SB09760RATB-ND |
Manufacturer Part#: |
2SB09760RA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 18V 5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 18V 5A 120MHz 750mW T... |
DataSheet: | 2SB09760RA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 18V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2A, 2V |
Power - Max: | 750mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-B1 |
Base Part Number: | 2SB0976 |
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The 2SB09760RA is a bipolar transistor, a type of semiconductor device used in electronic circuits. Bipolar transistors are formed when two types of conductive materials, an emitter and collector, are joined together in a single unit. The collector is typically made of a doped semiconductor material such as silicon, while the emitter is typically made of a heavily doped germanium material. The base of the 2SB09760RA is also typically made of a heavily doped germanium material. Together, these three regions form a PNPN structure, which is responsible for most of the transistor’s electrical characteristics.
The application field of 2SB09760RA can be broadly classified into three categories: low-power digital circuits, integrated circuits for signal amplification, and high-power power circuits. Low-power digital circuits, such as computers and microprocessors, generally require small amounts of electric current to operate. In these circuits, the 2SB09760RA can act as an electric switch, controlling current flow within a circuit with extremely low voltage and power consumption. Similarly, in integrated circuits, the 2SB09760RA can be used as an amplifier to boost the signal sent between various components, such as microprocessors, graphics cards, and the various other components which make up the electronic system. The 2SB09760RA can also be used in high-power power circuits, such as motor control circuits, where it can act as a current switch, controlling the large amount of power that flows in these circuits.
The working principle of 2SB09760RA is based on its ability to modulate current flow through it. When a voltage is applied to the base of the 2SB09760RA, the electric current flowing between the emitter and the collector is allowed to flow. This current is then routed to other components in the circuit, such as resistors and diodes, where it is used to power up specific devices or increase the signal strength of certain signals. When the voltage to the base is reduced, the 2SB09760RA effectively blocks the current, preventing it from reaching other components in the circuit. This allows the transistor to act as a current switch, as well as an amplifier, in a circuit.
The 2SB09760RA is a great component to have in various electronic circuits due to its wide range of application fields and its simple working principle. Its ability to modulate current flow with extremely low power consumption allows it to be used in a wide variety of applications, from simple digital circuits to complex power control circuits. With the right know-how, the 2SB09760RA can be an equally effective component in both low-power and high-power circuits.
The specific data is subject to PDF, and the above content is for reference
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