2SB08730R Allicdata Electronics
Allicdata Part #:

2SB08730R-ND

Manufacturer Part#:

2SB08730R

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 20V 5A TO-92L
More Detail: Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Thro...
DataSheet: 2SB08730R datasheet2SB08730R Datasheet/PDF
Quantity: 1000
600 +: $ 0.32535
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2A, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L-A1
Description

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.

Transistors form the backbone of modern electronics, facilitating efficient and reliable operation of an extensive range of electronic devices. Bipolar Junction Transistors (BJTs) are perhaps the most widely used type since they form a reliable and easily operated source of electrical energy, capable of forming the foundation of all kinds of amplifiers and power circuits. The 2SB08730R specifically is a single BJT, a type of transistor used in applications where current and voltage need to be amplified.

Single BJTs are composed of three terminal pins: base, collector and emitter. Internal to the device is a PN junction between the base and collector, and a PN junction between the base and emitter. When forward biased, current can pass through the base collector junction, and the base-emitter junction can be used to control this current flow. This is done by a process called “base current injection”, where a small current is injected into the base in order to drastically increase the current that passes through the collector. All single BJTs act in this way, and the 2SB08730R is, as mentioned before, a single BJT.

The main application of the 2SB08730R is as a small signal amplifier, a function it fulfils very efficiently. It has a minimal current gain of 50 and a voltage gain of 100, and its minimal frequency can range from 50MHz up to 70MHz, depending on the circuit in which it is used. The device also has an extremely high output impedance of over 5kΩ, making it ideal for higher-pitched signals.

The 2SB08730R is capable of withstanding up to 100V, making it suitable for use in high-voltage applications. Additionally, its total power dissipation of 1W ensures its suitability for operation in many modern electronic systems, making it a very popular choice.

In conclusion, the 2SB08730R single BJT transistor is a very useful device for amplifying small signals and for operation in high-voltage applications. Its combination of output impedance, current gain and voltage gain make it an ideal choice for a wide range of amplifying applications, making it a popular option for many designs.

The specific data is subject to PDF, and the above content is for reference

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