2SB0766GRL Allicdata Electronics
Allicdata Part #:

2SB0766GRLTR-ND

Manufacturer Part#:

2SB0766GRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 1A MINI-PWR
More Detail: Bipolar (BJT) Transistor PNP 50V 1A 200MHz 1W Surf...
DataSheet: 2SB0766GRL datasheet2SB0766GRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F2
Base Part Number: 2SB0766
Description

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The 2SB0766GRL is a kind of single bipolar junction transistor (BJT) specifically developed for power management in a variety of electrical applications. It is excellent for use in switching power supplies for personal computers and peripheral equipment and for low power consumption applications like power audio amps.

The transistor has 3 terminals that are commonly referred to as the emitter, collector and base. The base provides a current that is amplified within the transistor and released at the collector. Generally, the current released at the collector must be higher than the base current, otherwise the switch remains off. The emitter is responsible for controlling the current amplitude at the collector. The functionality of the 2SB0766GRL comes from the ability to switch it rapidly using just a low input current.

The 2SB0766GRL offers some of the best transistor performance values in the industry. These include the collector current reach rating (Ic) of 600mA, a collector-emitter voltage rating (Vce) of 60V and a power dissipation rating of 1W. All these are exceptional for standard switching and application in switching power supplies.

Also, the transistor has a well-defined capacitance range between its base and collector, between base and emitter, and between the collector and emitter, allowing it to switch from the on to the off state quickly. This ensures the transistor is well-suited for applications that require high switching frequency, such as switching power supplies.

The 2SB0766GRL also comes with anon-zero electrical junction featuring a high gain and low power dissipation. This allows it to be used in places where low power dissipation is required while its high gain allows it to switch at much faster speeds. As a result, this transistor is ideal for use in applications with high-speed switching, such as in power audio amplifiers and switching power supplies.

The main advantage of this particular transistor is its low package size, which is 40% smaller than traditional BJTs. This means it requires less space for usage in a variety of applications. It is also reliable and durable, providing longer lifetime performance in comparison to other bipolar junction transistors.

The2SB0766GRL is sure to provide significant improvements in power management, especially in consumer electronics. Whether it is used in audio amplifiers or switching power supplies, this transistor will provide superior performance in comparison to other transistors while offering a smaller package size.

The specific data is subject to PDF, and the above content is for reference

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