Allicdata Part #: | 2SB08730Q-ND |
Manufacturer Part#: |
2SB08730Q |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 20V 5A TO-92L |
More Detail: | Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Thro... |
DataSheet: | 2SB08730Q Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 0.32535 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92L-A1 |
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2SB08730Q transistor is a type of bipolar junction transistor (BJT) that is specifically designed for use in high-current, high-voltage, and high-temperature applications. It is an ideal choice when a wide operating range and wide operating temperature range are required. It is a single transistor that offers low power dissipation and fast switching speed. This transistor provides good performance in high reliability applications, as well as offering protection against thermal runaway.
Application Field
The 2SB08730Q transistor is primarily designed for use in high-current and high-voltage applications. It can be used in a variety of applications, including power MOSFETs, IGBTs, light-emitting diodes (LEDs), motor controllers, power supplies, motor starters, and relay/switch applications. It is also suitable for applications requiring high switching speed and noise immunity. These transistors are also suitable for use in robotics and general-duty line controlled circuits.
Working Principle
The 2SB08730Q transistor uses a PNP junction. This type of transistor combines a pair of P type and N type regions, which form an internal junction that acts like a diode. When a positive input voltage is applied, the P type region becomes forward-biased, allowing current to flow through it. The N type region, on the other hand, is reverse-biased, preventing current from flowing through it. As a result, the transistor acts like a switch, either allowing current to flow through or blocking it, depending on the voltage level.
The 2SB08730Q transistor is capable of withstanding high voltages up to 100V. It has a large collector current (5A) and is capable of switching rapidly, with a maximum switching frequency of 200kHz. It has a low saturation voltage of 0.4V and a low on-state resistance of 0.7 ohms. The maximum power dissipation is up to 50W.
The 2SB08730Q transistor is a reliable, high-performance transistor designed for a wide range of applications. It is capable of providing low on-state resistances, low saturation voltages, and fast switching speeds. It is also designed to be highly reliable and durable, making it an ideal choice for high-voltage, high-current, and high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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