Allicdata Part #: | 2SB0956GRLTR-ND |
Manufacturer Part#: |
2SB0956GRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 20V 1A MINIP-3 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 1A 200MHz 1W Surf... |
DataSheet: | 2SB0956GRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 130 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F2 |
Base Part Number: | 2SB0956 |
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The 2SB0956GRL is a high-performance NPN silicon transistor used primarily in amplifier and switching applications. It belongs to the Bipolar Junction Transistor (BJT) category of transistors and has a single collector, base and emitter each. This device is widely used for linear and switching amplification of current and voltage signals in medium power applications such as automotive and audio products.
In amplifier applications, the 2SB0956GRL can be used as an output buffer or power amplifier. It is well known for its high current gain and wide voltage range. Its high current gain which is typically between 400 to 500, allows signals to pass through it in a very efficient manner. Its wide voltage range of up to 60V allows it to handle medium-high power applications. Furthermore, its collector-to-emitter voltage can handle up to 6V, allowing it to be used in applications where voltage is an important factor. In addition, it has a low turn-on and turn-off time, which makes it ideal for use in switching applications.
From a more technical standpoint, the 2SB0956GRL is a NPN-type silicon transistor which has a typical current gain from 400 to 500. It has a collector-emitter voltage range of -60V with a collector-base voltage range of -40V. Its base-emitter voltage is 0.6V and its maximum collector current is 0.2A. It also has a low collector to emitter saturation voltage of approximately 0.6V and a high current transfer ratio of 300.
In terms of its working principle, the 2SB0956GRL operates by allowing electrons to flow between its collector and emitter. When voltage is applied to the device, electrons flow from the emitter to the collector. The current gain of the device is determined by the ratio of collector current to the base current. The current gain is determined by the amount of N-type material in the device. When the base current is increased, the collector current increases and the collector-to-emitter voltage decreases, increasing the current gain of the device.
The 2SB0956GRL is an ideal choice for use in medium-power applications such as automotive and audio products. Its high current gain, wide voltage range and low turn-on/off time make it an ideal choice for use as an output buffer or power amplifier. It can also be used in switching applications where its low collector-to-emitter saturation voltage and high current transfer ratio make it an ideal choice for high performance and reliable applications. It is a reliable, high-performance device for a wide range of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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