Allicdata Part #: | 2SB07670QLTR-ND |
Manufacturer Part#: |
2SB07670QL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 80V 0.5A MINI PWR |
More Detail: | Bipolar (BJT) Transistor PNP 80V 500mA 120MHz 1W S... |
DataSheet: | 2SB07670QL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 150mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F1 |
Base Part Number: | 2SB0767 |
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The 2SB07670QL Transistor is a single Bipolar (BJT) device, designed for use as a main amplifier in electronic circuits. It is one of the most commonly used transistors in electronic industry, and is widely used in a variety of applications, from power amplifiers to automotive circuits.
The 2SB07670QL transistor is a NPN type of BJT transistor, meaning it is composed of 3 connections: an Emitter, a Base and a Collector. This type of transistor was invented in the 1940s by Shockley and Bardeen and is used in a variety of electronic devices and applications that have become embedded in our daily life.
The 2SB07670QL has a Voltage Collector Emitter Max of 80 VDC, a Current Collector (Ic) Max 160 mA, and a power dissipation of 625 mW. These parameters provide the 2SB07670QL with the capacity to be used in a variety of applications, including its main use as an amplifier.
The working principle of the 2SB07670QL transistor is based on the movement of electric charges between the Base, Emitter, and Collector. Waves of electric current pass through the Emitter and Base, and the resulting electric fields are able to cause charges in the Base-Collector-Conductive band, known as the P-N Junction. This causes the transistor to switch on and off and allow current to flow between the Emitter and Collector, or to shut down completely.
The most common use of the 2SB07670QL transistor is as an amplifier. This device has the ability to take a small amount of current, amp it up and transmit it forward further down the circuit. This amplification is what allows for the circuit to operate properly, and when used properly can amplify signals efficiently, without distortion.
The 2SB07670QL transistor is also used widely in automotive circuits, as it is able to efficiently process a wide variety of signals and respond quickly. Its ability to turn on and off quickly, as well as its low power dissipation makes it an ideal component for many automotive applications, including in automotive audio systems where fast response and low latency are needed.
The 2SB07670QL transistor is also used in RF circuits, as it has excellent RF performance and can be used in applications such as switch mode power amplifiers, low noise amplifiers and radio transmitters. This device is also used in many other applications, such as amplifiers in TVs, and computer circuits, as well as power supplies, control systems, and industrial process control.
The 2SB07670QL Transistor is an incredibly versatile component and is an essential component for many electronic devices. Its NPN structure, voltage parameters, and current parameters make it ideal for a variety of applications and its fast switching action makes it suitable for high speed circuits. It is a reliable component and with its wide use, it has become an essential component for many applications and is used in many of our everyday electronic devices.
The specific data is subject to PDF, and the above content is for reference
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