Allicdata Part #: | 2SC13830S-ND |
Manufacturer Part#: |
2SC13830S |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 25V 1A TO-92L |
More Detail: | Bipolar (BJT) Transistor NPN 25V 1A 200MHz 1W Thro... |
DataSheet: | 2SC13830S Datasheet/PDF |
Quantity: | 269 |
1 +: | $ 0.33390 |
10 +: | $ 0.27846 |
25 +: | $ 0.24394 |
100 +: | $ 0.20903 |
250 +: | $ 0.18116 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 500mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92L-A1 |
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The 2SC13830S is a type of single bipolar junction transistor (BJT). Designed for linear amplification, it is often used in audio amplifiers, radio-frequency (RF) power amplifiers, and switching applications. The device is constructed from a Si epitaxial planar transistor chip and designed for use as an amplifier, in class A, B and C.
The device has three parts; the collector, the base and the emitter. The collector captures the majority carriers present at the emitter and injects majority carriers into the base, creating a potential to control the current flow between the emitter and collector. The base, which is a thin layer between the emitter and collector, isolates the collector from the emitter, creating a diode junction.
On the 2SC13830S transistor, the collector-emitter voltage, also known as V CE or Vce, typically ranges from 30V to 300V. It is a low frequency device and is capable of withstanding high voltages of 3KV and high frequency currents of up to 500MHz. The maximum collector current (Ic) is typically 400mA.
Another important figure associated with the 2SC13830S is the collector-to-emitter saturation voltage (Vce(sat)). This is the maximum voltage that may be applied across the collector and emitter of the transistor before it begins to "saturate" or limit current due to the increase in the base-collector reverse-bias voltage. This value is typically 0.18V and 0.32V depending on the current level.
The 2SC13830S also has a variety of application fields, such as power amplifiers, switching applications, and test instruments. It has found applications in audio amplifiers, switched power supplies, industrial and domestic use, and in particular, switching applications. It is suitable for use in high-frequency oscillators and motor control.
The 2SC13830S is also designed for wideband matching and high-frequency RF amplifiers that require good gain and power linearity. As such, it is suitable for use in mobile handsets, W-LAN radios, communication systems, and other high-frequency applications.
The 2SC13830S has an application as a sound amplifier due to its wide band matching feature, and its low harmonic distortion. It has been used in audio amplifiers and home entertainment systems to provide high-quality sounds. It also can be used in combination with an operational amplifier to create a wide range of musical effects.
The most common working principle of the 2SC13830S transistor is its linear operation. In this operation mode, the current gain of the device is relatively constant over a certain range of input signals and the output voltage will vary relatively linearly to the input signal. In this mode, a small change in the collector voltage will create a large change in the collector current, allowing the transistor to be operated for both voltage and current regulation. When operated in its linear mode, the 2SC13830S is usually found as an amplifier, regulator or power switch for use in audio, communication, automotive and other applications.
The 2SC13830S is a reliable and versatile transistor that can be used in a variety of applications. Its wide range of operation and current gain capabilities make it suitable for use in a variety of high- frequency and low-frequency applications. It is constructed from a high-reliability silicon epitaxial planar transistor die, making it a popular choice for reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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