Allicdata Part #: | 2SC15670R-ND |
Manufacturer Part#: |
2SC15670R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 100V 0.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 500mA 120MHz 1.2... |
DataSheet: | 2SC15670R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 130 @ 150mA, 10V |
Power - Max: | 1.2W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126B-A1 |
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The 2SC15670R is a NPN silicon epitaxial planar transistor, with modern advanced and small transistor structure, which makes it suitable for use in low-voltage high-frequency switching and large-current circuits. It has the advantages of low power consumption, large current amplification factor, high insulation resistance, vast operating temperature range and strong anti-interference capability.
The 2SC15670R belongs to the family of single bipolar junction transistor (BJT) transistors. This type of transistor consists of three layers of semiconductor, N-type (negative) P-type (positive), and N-type (negative) layers, and a circuit terminal connects each layer. A single BJT transistor can be either an NPN or PNP transistor type.
The working principle of the 2SC15670R is based on the transfer of electricity through the semiconductor layers. When the power supply applies voltage to the base, current flows from the emitter to the collector through the base. This in turn, generates an electrical field that causes electrons to flow faster than normal through the transistor, thereby amplifying the input voltage from the base. This process is known as transistor biasing.
The 2SC15670R is used for a wide range of applications, mainly in high-frequency switching and high-current circuits, such as TV and audio power amplifiers, output stage of AC and DC relay drivers, DC switching power supply, lighting control and power switching devices, and various digital control circuits.
The 2SC15670R is equipped with excellent electrical characteristics, including high current gain (hFE) up to 250, low collector-emitter saturation voltage (VCE(sat)) of 0.2V, low transition frequency (fT) of 150kHz, low collector-base capacitance (Ccb) of 0.3pF, and high input resistive (RIN) of 200KΩ. With these features, the transistor can provide optimal performance for PCs, such as low power consumption, less heat generation, better performance and higher speed.
In addition, the 2SC15670R is specifically designed with a series passivation layer, which reduces noise and ensures greater reliability in operation. This series passivation layer also prevents the oxidation of contacts and helps to prolong the transistor’s life.
The 2SC15670R offers a variety of features that make it ideal for use in a wide range of applications. Its small structure and low power consumption allow it to be used in power switching systems, lighting control and other digital control circuits. In addition, its high gain, low saturation voltage, low transition frequency and low capacitance make it suitable for TV, audio power amplifiers and relay drivers. The series passivation layer also makes it more reliable, noise-free and longer lasting.
The specific data is subject to PDF, and the above content is for reference
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