Allicdata Part #: | 2SC15730Q-ND |
Manufacturer Part#: |
2SC15730Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 200V 0.07A TO-92L |
More Detail: | Bipolar (BJT) Transistor NPN 200V 70mA 80MHz 1W Th... |
DataSheet: | 2SC15730Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 70mA |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 2µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92L-A1 |
Base Part Number: | 2SC1573 |
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2SC15730Q is a single bipolar junction transistor that is used for many electronics applications and projects. It is typically used for amplifying and switching purposes in a variety of electronics applications, such as wireless networks, audio amplifiers, instrumentation, and other related applications. The transistor is designed to provide excellent amplification, low power consumption, and very long life.
Key Features
- High current - up to 200 mA per unit
- Low collector-emitter saturation voltage - VCE (sat) down to 1 V
- High gain - up to 100
- Surface-mount package
Applications
Due to the 2SC15730Q transistor’s features, it is used in many different applications. These applications include:
- Switching circuits in cellular networks
- Driver and power amplifiers for audio applications
- Instrumentation gain stages
- High-frequency amplifiers
- High density power supplies
Working Principle
The 2SC15730Q is a bipolar junction transistor, or BJT. This type of semiconductor device is formed by two p-n junctions and consists of three terminals. The first two terminals of a BJT are known as collectors and emitters, while the third terminal is the base. In single-junction BJTs, the base voltage is controlled by the voltage at the emitter and collector.
2SC15730Q transistors generally work by taking a current at the emitter and allowing the base voltage to control how much of that current is allowed to flow through to the collector. The larger the base voltage, the higher the voltage at the collector. This is how the 2SC15730Q transistor amplifies and controls signals.
Conclusion
The 2SC15730Q is a single bipolar junction transistor used for amplifying and switching in many electronics applications. It is designed with excellent characteristics such as high current, low VCE (collector-emitter) saturation voltage, and high gain. Common applications of this type of transistor include cellular networks, audio amplifiers, instrumentation, high-frequency amplifiers, and power supplies. The transistor works by taking a current at the emitter and allowing the base voltage to control how much of that current is allowed to flow through to the collector.
The specific data is subject to PDF, and the above content is for reference
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