2SC1740STPS Allicdata Electronics
Allicdata Part #:

2SC1740STPS-ND

Manufacturer Part#:

2SC1740STPS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 50V 0.15A SPT
More Detail: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 300m...
DataSheet: 2SC1740STPS datasheet2SC1740STPS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT
Base Part Number: 2SC1740
Description

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2SC1740STPS Introduction

2SC1740STPS is a type of single bipolar junction transistor or BJT. The BJT is a type of transistor device used to switch or amplify electrical signals that can be found in many circuits. Specifically, the 2SC1740STPS is a NPN-Type compound-loaded with two outer electrodes and a middle junction. It has a dissipation rate of 0.8W, collector current of 3.0A and DC current gain of 130. It is packaged in a TO-220 case and offers relatively low-power operation.

2SC1740STPS Application Fields

The 2SC1740STPS can be found in a wide range of applications. It is typically used as an amplifier in circuits, such as communication systems and audio equipment, as well as in high-speed switching systems. Moreover, 2SC1740STPS can be used for various timing, switching and control applications, such as regulators. It is also used for driving small load motors and is popular in consumer electronics and office equipment.

2SC1740STPS Working Principles

The 2SC1740STPS is a three-terminal device with a base, a collector, and an emitter. In operation, the voltage applied to the base must be lesser than that applied to the emitter in order for the transistor to turn on, allowing current to flow from the collector to the emitter. When the base voltage is greater than that of the emitter, the transistor turns off and blocks current flow. The amount of current flow is proportional to the amount of base current that is flowing.

In additionally, one key attribute of the 2SC1740STPS is its current gain, which is basically the ratio between the current output and current input of the transistor. For example, if the current gain of the transistor is 100, then if a tiny amount of current is applied to the base, the current gain is multiplied by 100, thus the amount of current that reaches the output is 100 times higher.

The collector-to-emitter saturation or on-state voltage should be considered when using the 2SC1740STPS. This is the voltage present across the collector and emitter when the transistor is in an ‘on’ state and current is flowing. The saturation voltage varies with changes in temperature and it must not exceed the maximum power dissipation level, which is typically stated for such transistors, to ensure reliable and efficient operation.

The 2SC1740STPS is also dependent on a process of heat dissipation where the generated thermal energy from the operation of the transistor needs to be free from the transistors itself, otherwise the junction temperature of the device increases, thus affectingits performance and reliability. Heat sinks can be used to dissipate the energy and keep the transistor within its safe operating levels. Good design practices include considering the geometry, size and fineness of the heat sink surface to ensure it provides maximum heat dissipation, is robust and does not damage the component.

The specific data is subject to PDF, and the above content is for reference

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