2SC13840R

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 10V
Power - Max:	1W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92L-A1

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2SC13840R Application Field and Working PrincipleIntroductionThe 2SC13840R is a silicon-based NPN transistor which uses a bipolar junction transistor (BJT) design. It is often used in applications such as FM radio, video and audio amplifiers, oscillators and switching circuits. It has a collector current of 1 mA (maximum), collector-base voltage of 40 V (maximum) and collector-emitter voltage of 40 V (maximum). It is also capable of dissipating a power of 3.6 W (maximum). This guide will provide a brief overview of the 2SC13840R application field and working principle. ApplicationsThe 2SC13840R is most commonly used for FM radio and video applications due to its superior frequency response capabilities. Its low noise levels also make it well-suited for oscillator designs, as well as for audio amplifiers. Its wide power range (from 25 mW up to 3.6 W) makes it suitable for various power levels, while its low input capacitance makes it ideal for fast switching circuits.The 2SC13840R can be used in a wide range of applications including RF receivers, oscillator applications, audio amplifiers, video amplifier applications, switching circuits, and general-purpose amplification. Its excellent noise characteristics also make it suitable for noise suppression circuits, as well as for transimpedance amplifiers. Its wide power range also make it suitable for high voltage and high current applications.Working PrincipleThe 2SC13840R is a NPN (negative-positive-negative) type bipolar junction transistor. It features three terminals: collector, base, and emitter. When the voltage at the base terminal of the 2SC13840R is increased, electrons from the emitter move towards the collector, creating a controlled electric current between the emitter and the collector. This electric current is proportional to the base voltage, and will decrease if the base voltage decreases.The amount of current flowing in the 2SC13840R depends on two parameters: the current gain, which is also known as the hFE, and the saturation current, which is the current that flows through the device when the base voltage is at the maximum voltage level. The current gain of the 2SC13840R depends on the type of device; the higher the hFE, the more current will be induced by the base voltage.ConclusionThe 2SC13840R is an NPN transistor which is well-suited for FM radio, video, audio and oscillator applications. Its wide power range of 0.025 W to 3.6 W makes it suitable for a variety of applications. Its low noise levels make it well-suited for oscillator designs, as well as for audio amplifiers. Its low input capacitance also makes it ideal for fast switching circuits. In addition, its high current gain (hFE) makes it suitable for many types of applications. Finally, its ability to dissipate power and its wide temperature range make it suitable for various types of applications and environments.

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