Allicdata Part #: | 2SC13840S-ND |
Manufacturer Part#: |
2SC13840S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 50V 1A TO-92L |
More Detail: | Bipolar (BJT) Transistor NPN 50V 1A 200MHz 1W Thro... |
DataSheet: | 2SC13840S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 500mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92L-A1 |
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2SC13840S is a type of transistor that falls under the category of Transistors - Bipolar (BJT) - Single. It is a lateral NPN field-effect transistor with a good linearity performance up to 30V and up to 50A current. The 2SC13840S is primarily used for voltage and current amplification.
The device is constructed from two N-type silicon layers separated by a P-type layer between them. The N layers are separated by a P type layer, called the base region, which determine the voltage gain of the device. The P layer is then connected to the drain, source and collector terminals, which allows for the conduction of electricity. The 2SC13840S has a relatively low power dissipation and high gain/current capability.
The working principle of the device can be understood by considering the transfer relationship between the base current Ib, collector current Ic, and the voltage Vcb between collector and base. The transfer relationship of the 2SC13840S is represented by the common-emitter (CE) characteristic curve, with the device exhibiting a linear small-signal behavior. The device can be considered to have three regions of operation: cut-off voltage VBE(cut-off), active region, and saturation region.
In the cut-off region, the collector-base voltage Vcb is larger than a certain value (VBE(cut-off)) and the collector current is almost zero; the device is in cutoff. In the active region, the collector-base voltage Vcb is lower than the VBE(cut-off) and the collector current is in the form of a linear function of Vcb; the device is in active region. In the saturation region, the collector-base voltage Vcb is lower than a certain value (VBE(sat)) and the collector current saturates; the device is in saturation.
The 2SC13840S features high voltage gain, high linearity, low power dissipation, high frequency response, and wide bandwidth. It is primarily used in power circuits, audio circuits, signal conditioning and control circuits, and other applications where high linearity is needed. It can also be used in high power supplies, motor control, amplifiers, and other applications where high voltage gain and high linearity are critical.
In summary, the 2SC13840S is a useful lateral NPN field-effect transistor with a wide range of applications. It is capable of providing high voltage gain, high linearity, and a wide bandwidth. Its main applications are in power circuits, audio circuits, signal conditioning and control circuits, and other applications where high linearity is required.
The specific data is subject to PDF, and the above content is for reference
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