2SC3332R-AA Allicdata Electronics
Allicdata Part #:

2SC3332R-AA-ND

Manufacturer Part#:

2SC3332R-AA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 0.7A 160V
More Detail: Bipolar (BJT) Transistor Through Hole 3-NP
DataSheet: 2SC3332R-AA datasheet2SC3332R-AA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: --
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: 3-NP
Description

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2SC3332R-AA application field and working principle2SC3332R-AA is a transistor, which is classified as a single Bipolar Junction Transistor (BJT). It is an NPN silicon planar epitaxial transistor and mainly used as a switching transistor, as well as for small signal and linear amplification. This transistor is ideal for operating when the temperature is between -40℃ to +125℃ and its collector-emitter voltage and collector-base voltage is between 50V to 300V and the range for the collector current is from 1A to 1.2A. The 2SC3332R-AA consists of three pins; these pins are known as the base, collector, and emitter. In the BJT structure, the base is the control element, while the emitter and the collector are the output elements. The base pin is also known as the control terminal, where the control signal is applied. The emitter is the electrode which is connected to the most negative supply voltage and the collector is the forward connection of the base, which receives very small current, known as the beta input current. When a small base current is applied to the transistor due to a small forward biasing of the junction between the base and the emitter, the electric field will develop between the base and collector terminals. This electric field will cause the electric carriers to be injected into the collector region, and which creates electric potential at the base-collector junction and the collector-emitter junction. At the base-collector junction, the electric field drifts the electrons, which are injected by the emitter, in the opposite direction back to the emitter. As a result, it creates a path for electric current flow, known as Electron Flow (EF). This electric current is known as the beta output current and is collected by the collector and is then made available to the load.The working principle of the 2SC3332R-AA can be explained using the concepts of current Gain (alpha) and voltage gain (beta). Alpha is a measure of the increase in current between the base and the emitter, whereas Beta is the measure of the gain of the voltage between the base and the collector. Alpha is defined as the ratio between the collector current and the base current, whereas Beta is the ratio between the collector current and the voltage at the base. Alpha and Beta can be expressed mathematically as follows: Alpha = Current gain (Ic/Ib) Beta = Voltage gain (Ic / Vb)The gain of the device is determined by the values of Alpha and Beta, and the higher the Alpha and Beta values, the better the gain of the device. However, the Beta value is higher than the Alpha value of the device.The main purpose of the 2SC3332R-AA is to amplify the signal, as well as switching operations. This transistor can be used as an amplifier in audio circuity, as well as in RF applications, where a better gain is required. It can also be used as an amplifier in power supplies, voltage regulator circuits, and in digital logic circuits. It can also be used for switching operations such as controlling motors, relays, LEDs, and for controlling the flow of electricity between two points. In conclusion, the 2SC3332R-AA is a single Bipolar Junction Transistor (BJT) with the gain of Alpha and Beta. This device is mainly used for small signal and linear amplification, as well as switching operations. It is ideal for operating in a temperature range between -40℃ to +125℃ and is capable of handling a collector-emitter voltage between 50V to 300V and a collector current range from 1A to 1.2A.

The specific data is subject to PDF, and the above content is for reference

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