Allicdata Part #: | 2SC3332SOS-ND |
Manufacturer Part#: |
2SC3332S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 0.7A NP |
More Detail: | Bipolar (BJT) Transistor NPN 160V 700mA 120MHz 700... |
DataSheet: | 2SC3332S Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 25mA, 250mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 5V |
Power - Max: | 700mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | 3-NP |
Base Part Number: | 2SC3332 |
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2SC3332S is a single bipolar transistor (BJT) used in a wide range of applications. It is typically used for switching, amplification, and other digital logic-level operations. The device was developed and launched by Toshiba Corporation, one of the largest manufacturers of electronic components in the world.
The 2SC3332S is a NPN bipolar junction transistor (BJT). The device consists of three regions, the collector, base, and emitter, which provide current amplification and switching capabilities. It can be used as a switch, amplifier, and digital logic-level operation, as well as an interfacing and isolating device. The device has a wide range of applications in consumer electronics, audio equipment, automotive, telecommunications, and computer-related products.
The collector region of the 2SC3332S is the terminal to which the current flows in the device. The collector region is the output terminal where the amplified current is taken out. This region is always biased with a negative (low) voltage relative to the base region, allowing the transistor to be used as an amplifier or switch. The base region in the 2SC3332S is the terminal controlling the amount of current that flows through the collector region. It is this region where a current should be supplied for the transistor to switch and amplify. Finally, the emitter region is the terminal from where the current flows into the intramolecular circuit. This region is always biased with a positive (high) voltage.
The 2SC3332S is a readily available, versatile and cost-effective device for various switching and amplification applications. Due to its low power consumption, high switching speeds and the ability to be used as an isolating device, the 2SC3332S is being used in more and more applications. It\'s suitable for both through-hole and surface-mount packages. This device can also be used in applications where maximum voltage or current is required.
In general, the 2SC3332S can be used with a wide range of frequencies, from DC to microwave frequencies. The device is adapted to both analog and digital signal processing and can be used in applications such as mobile telecommunication systems, computer peripherals, industrial and consumer electronics, automotive systems and others. The 2SC3332S can also be used for amplifying and switching low-level signal and for signal isolation.
In summary, the 2SC3332S is a versatile and cost-effective device suitable for a wide range of applications, from consumer and automotive to industrial applications. It is a NPN single bipolar transistor (BJT) featuring a collector, base, and emitter region, which provide current amplification and switching capabilities. It can be used in applications where maximum voltage or current is required and with frequencies ranging from DC to microwave. The device also suits both through-hole and surface-mount packages.
The specific data is subject to PDF, and the above content is for reference
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