2SC3648S-TD-E Allicdata Electronics
Allicdata Part #:

2SC3648S-TD-EOSTR-ND

Manufacturer Part#:

2SC3648S-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 160V 0.7A SOT89-3
More Detail: Bipolar (BJT) Transistor NPN 160V 700mA 120MHz 500...
DataSheet: 2SC3648S-TD-E datasheet2SC3648S-TD-E Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Description

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The 2SC3648S-TD-E is a NPN type, single amp transistor manufactured by Toshiba. It is popularly known as a single Bipolar Junction Transistor (BJT). Generally, this type of transistor is used for both digital and analog applications, and is also known for its high gain, low noise characteristics and wide range of power output operations.

A typical 2SC3648S-TD-E includes three P-N junctions. The junctions form three regions; the base, the collector and the emitter. In an NPN type, the collector is the negative terminal while the emitter is the positive terminal. The base is a very thin, lightly doped semiconductor layer between the collector and emitter and receives the input, making it the controlling element of the bipolar junction transistor. When an input voltage is applied to the base, current flows through the collector to the emitter. This is known as transistor action.

The 2SC3648S-TD-E exemplifies high-current gain, making it suitable for amplifying low-voltage, low-current signals from a variety of sources including microphones and thermistors. It provides a current gain of up to 500 and noise levels of 1.2 Vpp for 50 kHz operation. It is also suitable for high-speed switching, as it has a low on-state voltage of less than 1 V and a fast rise time. Additionally, with its minimal incremental cost, the 2SC3648S-TD-E offers an excellent choice for power supplies, audio amplifiers, modulators and test equipment.

When compared to other transistors, the 2SC3648S-TD-E is much more compact in size due to its single amp design. Its small footprint allows for integration into existing designs with minimal extra space. Because of this, it can be used in applications where space or size is a concern. The transistor is also suitable for use in temperatures ranging from -55 to +150°C, making it suitable for a wide range of applications. This makes the 2SC3648S-TD-E an excellent option for designers needing a reliable and efficient transistor.

The 2SC3648S-TD-E is the perfect choice for designers seeking a cost effective, high performance transistor for a variety of applications. It is well-suited for audio amplifiers, modulators, power supplies, and test equipment due to its high current gain, wide operating temperature range, small footprint, and fast switching times. With its outstanding features, applications, and low cost, the 2SC3648S-TD-E is an excellent option for designers needing a reliable and efficient transistor.

The specific data is subject to PDF, and the above content is for reference

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